NXP Semiconductors - BU4523AW

  1. Home
  2. NXP Semiconductors - BU4523AW
BU4523AW by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BU4523AW
Description NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 11 A; Transistor Element Material: SILICON; Maximum Collector-Emitter Voltage: 800 V;
Datasheet BU4523AW Datasheet
In Stock1,276
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 11 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: SWITCHING
JEDEC-95 Code: TO-247
Polarity or Channel Type: NPN
Surface Mount: NO
Minimum DC Current Gain (hFE): 4.2
No. of Terminals: 3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 800 V
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Case Connection: COLLECTOR
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,276 - -

Popular Products

Category Top Products

TIP122-S by Bourns

TIP122-S

Bourns

Bourns TIP122-S is a NPN Darlington transistor with hFE of 1000, VCE of 100V, and IC of 5A. Ideal for power applications in various industries due to its high current gain and voltage capabilities. Package style is flange mount with through-hole terminals for easy installation.
TIP112 by Crimson Semiconductor

TIP112

Crimson Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Collector Current (IC): 2 A; Package Body Material: PLASTIC/EPOXY;
MJD44H11RLG by Onsemi

MJD44H11RLG

Onsemi

MJD44H11RLG by Onsemi is a NPN BJT transistor with 80V VCEO, 8A IC, and 20W Ptot. Ideal for switching applications, it has a hFE of 40 and operates up to 150°C. The GULL WING package style makes it suitable for surface mount designs.
BD138 by NXP Semiconductors

BD138

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 160 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
2N3055 by Aeroflex/metelics

2N3055

Aeroflex/metelics

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Minimum DC Current Gain (hFE): 5; Package Body Material: METAL;
TIP41C by Baneasa S A

TIP41C

Baneasa S A

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 6 A; Terminal Form: THROUGH-HOLE; Package Style (Meter): FLANGE MOUNT;
2SC5200-O by Toshiba

2SC5200-O

Toshiba

Toshiba's 2SC5200-O is a NPN BJT transistor with max VCEsat of 3V, hFE of 80, and IC of 15A. Ideal for amplifier applications due to its max power dissipation of 150W and collector-emitter voltage of 230V. Suitable for high-power audio amplifiers or industrial equipment requiring robust performance in a rectangular package style.
TIP125 by General Transistor

TIP125

General Transistor

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000;
TIP125 by Diotec Semiconductor Ag

TIP125

Diotec Semiconductor Ag

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 5 A; JESD-30 Code: R-PSFM-T3; Terminal Form: THROUGH-HOLE;
BCX5616TA by Diodes Incorporated

BCX5616TA

Diodes Incorporated

BCX5616TA by Diodes Inc. is a NPN BJT transistor for switching applications. Features include VCEsat of 0.5V, hFE of 100, and IC of 1A. With a max operating temp of 150°C, it has a collector-emitter voltage of 80V and transition frequency of 150MHz.
TIP111 by Samsung

TIP111

Samsung

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Package Body Material: PLASTIC/EPOXY;
TIP3055 by SPC TECHNOLOGY/ MULTICOMP

TIP3055

SPC TECHNOLOGY/ MULTICOMP

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Collector Current (IC): 15 A; Transistor Element Material: SILICON;
2SC5200OTU by Fairchild Semiconductor

2SC5200OTU

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 30 MHz; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 17 A;
BDW93C by Fairchild Semiconductor

BDW93C

Fairchild Semiconductor

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 12 A; Package Style (Meter): FLANGE MOUNT;
BD679A by Samsung

BD679A

Samsung

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 4 A;
TIP36C by Mospec Semiconductor

TIP36C

Mospec Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 25 A;
TIP32C by Crimson Semiconductor

TIP32C

Crimson Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;
MJD31CT4 by STMicroelectronics

MJD31CT4

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 15 W; Maximum Collector Current (IC): 3 A; Transistor Application: SWITCHING;
TIP117 by Transys Electronics

TIP117

Transys Electronics

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Maximum VCEsat: 2.5 V;
BD1396STU by Onsemi

BD1396STU

Onsemi

BD1396STU by Onsemi is a NPN BJT transistor with 80V VCEO, 1.5A IC, and 13W Ptot. Ideal for switching applications, it has a min hFE of 40 and operates up to 150°C. The package style is flange mount with through-hole terminals in a rectangular shape.