NXP Semiconductors - BU506D

BU506D by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BU506D
Description NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 5 A; Maximum Power Dissipation Ambient: 100 W;
Datasheet BU506D Datasheet
In Stock55
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 5 A
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Sub-Category: Other Transistors
Surface Mount: NO
No. of Terminals: 3
Maximum Power Dissipation (Abs): 100 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 150 Cel
Case Connection: COLLECTOR
Maximum Power Dissipation Ambient: 100 W
JEDEC-95 Code: TO-220AB
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 6
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 700 V
Additional Features: FORMED LEAD OPTIONS ARE AVAILABLE
Maximum VCEsat: 1 V
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