NXP Semiconductors - BUK443-100B

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BUK443-100B by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BUK443-100B
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Pulsed Drain Current (IDM): 32 A; Maximum Operating Temperature: 150 Cel; Maximum Feedback Capacitance (Crss): 100 pF;
Datasheet BUK443-100B Datasheet
In Stock3,105
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 60 ns
Maximum Drain Current (ID): 8 A
Maximum Pulsed Drain Current (IDM): 32 A
Surface Mount: NO
No. of Terminals: 3
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
Maximum Turn Off Time (toff): 145 ns
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Maximum Power Dissipation Ambient: 25 W
Maximum Drain-Source On Resistance: .2 ohm
Maximum Feedback Capacitance (Crss): 100 pF
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 100 V
Qualification: Not Qualified
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