NXP Semiconductors - BUK565-200A

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BUK565-200A by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BUK565-200A
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Drain Current (ID): 14 A; Peak Reflow Temperature (C): NOT SPECIFIED;
Datasheet BUK565-200A Datasheet
In Stock2,161
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 115 ns
Maximum Drain Current (ID): 14 A
Maximum Pulsed Drain Current (IDM): 56 A
Sub-Category: FET General Purpose Powers
Surface Mount: YES
No. of Terminals: 2
Maximum Power Dissipation (Abs): 125 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 235 ns
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Power Dissipation Ambient: 125 W
Maximum Drain-Source On Resistance: .23 ohm
Avalanche Energy Rating (EAS): 100 mJ
Maximum Feedback Capacitance (Crss): 80 pF
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 200 V
Qualification: Not Qualified
Additional Features: LOGIC LEVEL COMPATIBLE
Maximum Drain Current (Abs) (ID): 14 A
Peak Reflow Temperature (C): NOT SPECIFIED
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