NXP Semiconductors - BUK582-60A

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BUK582-60A by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BUK582-60A
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Operating Temperature: 150 Cel; Maximum Turn Off Time (toff): 140 ns;
Datasheet BUK582-60A Datasheet
In Stock87
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 100 ns
Maximum Drain Current (ID): 2.5 A
Maximum Pulsed Drain Current (IDM): 10 A
Surface Mount: YES
No. of Terminals: 4
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 140 ns
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .15 ohm
Avalanche Energy Rating (EAS): 30 mJ
Maximum Feedback Capacitance (Crss): 100 pF
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 60 V
Qualification: Not Qualified
Additional Features: LOGIC LEVEL COMPATIBLE
Peak Reflow Temperature (C): NOT SPECIFIED
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