NXP Semiconductors - BUK7L3R3-34BRC

BUK7L3R3-34BRC by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BUK7L3R3-34BRC
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 298 W; Minimum DS Breakdown Voltage: 34 V; Package Shape: RECTANGULAR;
Datasheet BUK7L3R3-34BRC Datasheet
In Stock127
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 218 A
Maximum Pulsed Drain Current (IDM): 872 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
No. of Terminals: 3
Maximum Power Dissipation (Abs): 298 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0033 ohm
Avalanche Energy Rating (EAS): 1900 mJ
JEDEC-95 Code: TO-220AB
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 34 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 218 A
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