NXP Semiconductors - BUK9508-55,127

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BUK9508-55,127 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BUK9508-55,127
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 187 W; Maximum Operating Temperature: 175 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet BUK9508-55,127 Datasheet
In Stock40
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 230 ns
Maximum Drain Current (ID): 75 A
Maximum Pulsed Drain Current (IDM): 240 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
No. of Terminals: 3
Maximum Power Dissipation (Abs): 187 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
Maximum Turn Off Time (toff): 435 ns
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Power Dissipation Ambient: 187 W
Maximum Drain-Source On Resistance: .008 ohm
Avalanche Energy Rating (EAS): 500 mJ
Maximum Feedback Capacitance (Crss): 480 pF
JEDEC-95 Code: TO-220AB
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 55 V
Qualification: Not Qualified
Additional Features: LOGIC LEVEL COMPATIBLE
Maximum Drain Current (Abs) (ID): 75 A
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