NXP Semiconductors - BUK9MGP-55PTS

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BUK9MGP-55PTS by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BUK9MGP-55PTS
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND CURRENT AND KELVIN SENSOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 5.2 W; Maximum Drain-Source On Resistance: .0279 ohm; Terminal Position: DUAL;
Datasheet BUK9MGP-55PTS Datasheet
In Stock56
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND CURRENT AND KELVIN SENSOR
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .00916 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
No. of Terminals: 20
Maximum Power Dissipation (Abs): 5.2 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G20
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .0279 ohm
Moisture Sensitivity Level (MSL): 3
Maximum Feedback Capacitance (Crss): 163 pF
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 55 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 16.9 A
Peak Reflow Temperature (C): 260
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