BUK9MLL-55PLL by NXP Semiconductors | Transistors

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	BUK9MLL-55PLL
Description	N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.3 W; JESD-30 Code: R-PDSO-G20; Maximum Drain Current (ID): 5.9 A;
Datasheet	BUK9MLL-55PLL Datasheet
In Stock	420

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	5.9 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
No. of Terminals:	20
Maximum Power Dissipation (Abs):	3.3 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G20
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Maximum Drain-Source On Resistance:	.0558 ohm
Moisture Sensitivity Level (MSL):	3
Maximum Feedback Capacitance (Crss):	82 pF
JEDEC-95 Code:	MS-013AC
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	55 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	5.9 A
Peak Reflow Temperature (C):	260

Pricing (USD)

Qty.	Unit Price	Ext. Price
420	-	-

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