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| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | BUK9MPP-55PRR,518 |
| Description | N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.9 W; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): 260; |
| Datasheet | BUK9MPP-55PRR,518 Datasheet |
| In Stock | 1,408 |
| NAME | DESCRIPTION |
|---|---|
| Maximum Power Dissipation (Abs): | 3.9 W |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain Current (ID): | 9.16 A |
| Maximum Drain Current (Abs) (ID): | 9.16 A |
| Sub-Category: | FET General Purpose Power |
| Peak Reflow Temperature (C): | 260 |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| Moisture Sensitivity Level (MSL): | 3 |









