NXP Semiconductors - BUT18AF

  1. Home
  2. NXP Semiconductors - BUT18AF
BUT18AF by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BUT18AF
Description NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 33 W; Maximum Collector Current (IC): 6 A; Transistor Application: SWITCHING;
Datasheet BUT18AF Datasheet
In Stock217
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 6 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 1000 ns
Sub-Category: Other Transistors
Surface Mount: NO
No. of Terminals: 3
Maximum Power Dissipation (Abs): 33 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
Maximum Turn Off Time (toff): 4800 ns
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Maximum Power Dissipation Ambient: 33 W
JEDEC-95 Code: TO-220AB
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 10
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 450 V
Additional Features: FORMED LEAD OPTIONS ARE AVAILABLE
Maximum VCEsat: 1.5 V
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
217 - -

Popular Products

Category Top Products

BD679 by Comset Semiconductors

BD679

Comset Semiconductors

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): .06 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 4 A;
BCP56-16-TP by Micro Commercial Components

BCP56-16-TP

Micro Commercial Components

Micro Commercial Components' BCP56-16-TP is a NPN Power BJT with VCEsat of 0.5V, hFE of 100, and IC of 1A. Ideal for applications requiring high power dissipation up to 1.5W in small outline packages. Suitable for surface mount designs operating b/w -55°C to 150°C.
TIP32C by Fairchild Semiconductor

TIP32C

Fairchild Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;
MJE350 by Fairchild Semiconductor

MJE350

Fairchild Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY;
D44H11 by Central Semiconductor

D44H11

Central Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 40 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 10 A;
NJVMJD44H11T4G by Onsemi

NJVMJD44H11T4G

Onsemi

NJVMJD44H11T4G by Onsemi is a NPN BJT transistor with 80V VCEO, 8A IC, and 20W Ptot. Ideal for switching applications, it has a hFE of 40 and operates b/w -55 to 150°C. This small outline package with Gull Wing terminals is AEC-Q101 compliant.
TIP41C by General Transistor

TIP41C

General Transistor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
TIP122 by Texas Instruments

TIP122

Texas Instruments

TIP122 by Texas Instruments is a NPN Darlington transistor with max VCEsat of 4V, hFE of 1000, and IC of 5A. Ideal for switching applications due to its high current gain and low saturation voltage. With a max power dissipation of 65W, it can handle high-power loads efficiently.
TIP125 by Rectron

TIP125

Rectron

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 5 A; Terminal Finish: MATTE TIN; Maximum Collector-Emitter Voltage: 60 V;
TIP111G by Onsemi

TIP111G

Onsemi

TIP111G by Onsemi is a NPN BJT with Darlington configuration, ideal for amplifier applications. It features 50W power dissipation, 80V max collector-emitter voltage, and 2A max collector current. The package is rectangular with through-hole terminals and can operate up to 150°C.
TIP142T by Fairchild Semiconductor

TIP142T

Fairchild Semiconductor

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 10 A; JESD-30 Code: R-PSFM-T3;
TIP36C by Tt Electronics Plc

TIP36C

Tt Electronics Plc

PNP; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 25 A; Terminal Finish: Tin/Lead (Sn/Pb); JEDEC-95 Code: TO-247;
TIP112 by Baneasa S A

TIP112

Baneasa S A

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 4 A; Terminal Form: THROUGH-HOLE; Package Body Material: PLASTIC/EPOXY;
BD679AS by Onsemi

BD679AS

Onsemi

The Onsemi BD679AS is a NPN Darlington BJT with 40W power dissipation, 750 min hFE, and 80V VCE. Ideal for switching applications, it operates up to 150°C and has a max collector current of 4A. Its package style is flange mount with matte tin finish in a rectangular shape.
MJE3055T by SPC TECHNOLOGY/ MULTICOMP

MJE3055T

SPC TECHNOLOGY/ MULTICOMP

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Collector Current (IC): 10 A; Minimum DC Current Gain (hFE): 5;
MJD340T4 by Onsemi

MJD340T4

Onsemi

MJD340T4 by Onsemi is a NPN BJT transistor with 300V VCEO, 0.5A IC, and 15W Ptot. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals for surface mount assembly. Operating up to 150°C, it has a min hFE of 30 and is made of silicon material.
TIP127 by Continental Device India

TIP127

Continental Device India

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Terminal Form: THROUGH-HOLE;
TIP36C by New England Semiconductor

TIP36C

New England Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 25 A; Minimum DC Current Gain (hFE): 15;
BUV48A by Tt Electronics Plc

BUV48A

Tt Electronics Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Peak Reflow Temperature (C): NOT SPECIFIED; Terminal Form: THROUGH-HOLE;
TIP125 by Central Semiconductor

TIP125

Central Semiconductor

PNP; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A;