NXP Semiconductors - BUV90

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BUV90 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BUV90
Description NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 12 A; Additional Features: FORMED LEAD OPTIONS ARE AVAILABLE; Package Body Material: PLASTIC/EPOXY;
Datasheet BUV90 Datasheet
In Stock425
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 12 A
Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Polarity or Channel Type: NPN
Surface Mount: NO
No. of Terminals: 3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 400 V
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Additional Features: FORMED LEAD OPTIONS ARE AVAILABLE
Maximum Operating Temperature: 150 Cel
Case Connection: COLLECTOR
Maximum VCEsat: 2 V
Maximum Power Dissipation Ambient: 125 W
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