NXP Semiconductors - BYD11DT/R

BYD11DT/R by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BYD11DT/R
Description RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Datasheet BYD11DT/R Datasheet
In Stock616
NAME DESCRIPTION
Package Body Material: GLASS
Maximum Forward Voltage (VF): 1.06 V
Config: SINGLE
Diode Type: RECTIFIER DIODE
Maximum Output Current: .5 A
Sub-Category: Rectifier Diodes
Surface Mount: NO
No. of Terminals: 2
Terminal Position: AXIAL
Package Style (Meter): LONG FORM
Technology: AVALANCHE
JESD-30 Code: O-LALF-W2
No. of Elements: 1
Package Shape: ROUND
Terminal Form: WIRE
Maximum Operating Temperature: 175 Cel
Case Connection: ISOLATED
No. of Phases: 1
Maximum Repetitive Peak Reverse Voltage: 200 V
Minimum Operating Temperature: -65 Cel
Maximum Non Repetitive Peak Forward Current: 10 A
Diode Element Material: SILICON
Qualification: Not Qualified
Reference Standard: IEC-134
Maximum Reverse Recovery Time: 3 us
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Pricing (USD)

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