BYD17DT/R by NXP Semiconductors | Diodes

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	BYD17DT/R
Description	RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Datasheet	BYD17DT/R Datasheet
In Stock	63

NAME	DESCRIPTION
Package Body Material:	GLASS
Maximum Forward Voltage (VF):	1.05 V
Config:	SINGLE
Diode Type:	RECTIFIER DIODE
Maximum Output Current:	.6 A
Surface Mount:	YES
Maximum Reverse Current:	1 uA
No. of Terminals:	2
Terminal Position:	END
Package Style (Meter):	LONG FORM
Technology:	AVALANCHE
JESD-30 Code:	O-LELF-R2
Minimum Breakdown Voltage:	225 V
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	WRAP AROUND
Maximum Operating Temperature:	175 Cel
Case Connection:	ISOLATED
No. of Phases:	1
Reverse Test Voltage:	200 V
Maximum Repetitive Peak Reverse Voltage:	200 V
Minimum Operating Temperature:	-65 Cel
Maximum Non Repetitive Peak Forward Current:	20 A
Diode Element Material:	SILICON
Qualification:	Not Qualified
Additional Features:	LOW LEAKAGE CURRENT
Reference Standard:	IEC-134
Application:	GENERAL PURPOSE
Maximum Reverse Recovery Time:	3 us

Pricing (USD)

Qty.	Unit Price	Ext. Price
63	-	-

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RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;