NXP Semiconductors - BZD23-C10AMO

BZD23-C10AMO by NXP Semiconductors

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	BZD23-C10AMO
Description	TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Datasheet	BZD23-C10AMO Datasheet
In Stock	3,369

BZD23-C10AMO Technical Details

NAME	DESCRIPTION
Package Body Material:	GLASS
Working Test Current:	50 mA
Config:	SINGLE
Diode Type:	TRANS VOLTAGE SUPPRESSOR DIODE
Sub-Category:	Voltage Reference Diodes
Surface Mount:	NO
Maximum Reverse Current:	20 uA
No. of Terminals:	2
Terminal Position:	AXIAL
Package Style (Meter):	LONG FORM
Maximum Non Repetitive Peak Reverse Power Dissipation:	300 W
Technology:	AVALANCHE
JESD-30 Code:	O-LALF-W2
Minimum Breakdown Voltage:	9.4 V
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	WIRE
Polarity:	UNIDIRECTIONAL
Maximum Operating Temperature:	175 Cel
Case Connection:	ISOLATED
Maximum Dynamic Impedance:	4 ohm
Maximum Breakdown Voltage:	10.6 V
Maximum Clamping Voltage:	14.8 V
Maximum Voltage Tolerance:	5 %
Diode Element Material:	SILICON
Qualification:	Not Qualified
Nominal Breakdown Voltage:	10 V
Nominal Reference Voltage:	10 V
Maximum Power Dissipation:	2.5 W

Pricing (USD)

Qty.	Unit Price	Ext. Price
3,369	-	-

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