NXP Semiconductors - BZD23-C130AMO

BZD23-C130AMO by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BZD23-C130AMO
Description TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Datasheet BZD23-C130AMO Datasheet
In Stock3,827
NAME DESCRIPTION
Package Body Material: GLASS
Working Test Current: 5 mA
Config: SINGLE
Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE
Sub-Category: Voltage Reference Diodes
Surface Mount: NO
Maximum Reverse Current: 5 uA
No. of Terminals: 2
Terminal Position: AXIAL
Package Style (Meter): LONG FORM
Maximum Non Repetitive Peak Reverse Power Dissipation: 300 W
Technology: AVALANCHE
JESD-30 Code: O-LALF-W2
Minimum Breakdown Voltage: 124 V
No. of Elements: 1
Package Shape: ROUND
Terminal Form: WIRE
Polarity: UNIDIRECTIONAL
Maximum Operating Temperature: 175 Cel
Case Connection: ISOLATED
Maximum Dynamic Impedance: 300 ohm
Maximum Breakdown Voltage: 141 V
Maximum Clamping Voltage: 185 V
Maximum Voltage Tolerance: 5 %
Diode Element Material: SILICON
Qualification: Not Qualified
Nominal Breakdown Voltage: 130 V
Nominal Reference Voltage: 130 V
Maximum Power Dissipation: 2.5 W
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