NXP Semiconductors - BZD23-C36AMO

BZD23-C36AMO by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BZD23-C36AMO
Description TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Datasheet BZD23-C36AMO Datasheet
In Stock223
NAME DESCRIPTION
Package Body Material: GLASS
Maximum Breakdown Voltage: 38 V
Config: SINGLE
Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE
Maximum Clamping Voltage: 50.1 V
Surface Mount: NO
Maximum Reverse Current: 5 uA
Diode Element Material: SILICON
No. of Terminals: 2
Qualification: Not Qualified
Terminal Position: AXIAL
Package Style (Meter): LONG FORM
Maximum Non Repetitive Peak Reverse Power Dissipation: 300 W
Technology: AVALANCHE
JESD-30 Code: O-LALF-W2
Nominal Breakdown Voltage: 36 V
Minimum Breakdown Voltage: 34 V
No. of Elements: 1
Package Shape: ROUND
Maximum Power Dissipation: 2.5 W
Terminal Form: WIRE
Polarity: UNIDIRECTIONAL
Maximum Operating Temperature: 175 Cel
Case Connection: ISOLATED
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Pricing (USD)

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