NXP Semiconductors - BZD27-C33T/R

BZD27-C33T/R by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BZD27-C33T/R
Description TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Datasheet BZD27-C33T/R Datasheet
In Stock188
NAME DESCRIPTION
Package Body Material: GLASS
Config: SINGLE
Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE
Surface Mount: YES
Terminal Finish: TIN
Maximum Reverse Current: 5 uA
No. of Terminals: 2
Terminal Position: END
Package Style (Meter): LONG FORM
Maximum Non Repetitive Peak Reverse Power Dissipation: 300 W
Technology: AVALANCHE
JESD-30 Code: O-LELF-R2
Minimum Breakdown Voltage: 31 V
No. of Elements: 1
Package Shape: ROUND
Terminal Form: WRAP AROUND
Polarity: UNIDIRECTIONAL
Maximum Operating Temperature: 175 Cel
Case Connection: ISOLATED
Moisture Sensitivity Level (MSL): 1
Maximum Clamping Voltage: 46.2 V
JESD-609 Code: e3
Diode Element Material: SILICON
Qualification: Not Qualified
Maximum Power Dissipation: .8 W
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Pricing (USD)

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