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| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | BZV55-C3V3T/R |
| Description | ZENER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND; |
| Datasheet | BZV55-C3V3T/R Datasheet |
| In Stock | 10 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | GLASS |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Working Test Current: | 5 mA |
| Config: | SINGLE |
| Diode Type: | ZENER DIODE |
| Maximum Voltage Temperature Coefficient: | 0 mV/Cel |
| Sub-Category: | Voltage Reference Diodes |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| Maximum Reverse Current: | 5 uA |
| No. of Terminals: | 2 |
| Terminal Position: | END |
| Package Style (Meter): | LONG FORM |
| Technology: | ZENER |
| JESD-30 Code: | O-LELF-R2 |
| No. of Elements: | 1 |
| Package Shape: | ROUND |
| Terminal Form: | WRAP AROUND |
| Polarity: | UNIDIRECTIONAL |
| Maximum Operating Temperature: | 200 Cel |
| Case Connection: | ISOLATED |
| Maximum Dynamic Impedance: | 95 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -65 Cel |
| Maximum Voltage Tolerance: | 5 % |
| Diode Element Material: | SILICON |
| Qualification: | Not Qualified |
| Nominal Reference Voltage: | 3.3 V |
| Maximum Power Dissipation: | .4 W |
| Peak Reflow Temperature (C): | 260 |
