NXP Semiconductors - CQF25C/D44

  1. Home
  2. NXP Semiconductors - CQF25C/D44
CQF25C/D44 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number CQF25C/D44
Description LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .15 A; Maximum Operating Temperature: 60 Cel; Semiconductor Material: AlGaAs; Spectral Bandwidth: 4.5 m;
Datasheet CQF25C/D44 Datasheet
In Stock1,428
NAME DESCRIPTION
Optoelectronic Type: LASER DIODE
Maximum Forward Current: .15 A
Peak Wavelength (nm): 875
Maximum Response Time: .0000000005 s
Spectral Bandwidth: 4.5 m
Maximum Operating Temperature: 60 Cel
Semiconductor Material: AlGaAs
Sub-Category: Laser Diodes
Maximum Forward Voltage: 2.5 V
Minimum Operating Temperature: -10 Cel
Mounting Feature: THROUGH HOLE MOUNT
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,428 - -

Popular Products

Category Top Products

HL6344G by Renesas Electronics

HL6344G

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .045 A; Maximum Threshold Current: 30 mA; Configuration: SINGLE WITH BUILT-IN PHOTO DIODE; Maximum Forward Voltage: 2.7 V;
SDL8031-001 by Onsemi

SDL8031-001

Onsemi

SDL8031-001 by Onsemi is an 810nm LASER DIODE with GaAlAs material. It operates b/w -10 °C to 50°C, featuring THROUGH HOLE MOUNT. Ideal for applications requiring precise laser emission in optoelectronics and telecommunications.
NX8562LF745-BA-A by Renesas Electronics

NX8562LF745-BA-A

Renesas Electronics

LASER DIODE; Mounting Feature: SURFACE MOUNT; Minimum Operating Temperature: -20 Cel; Maximum Forward Current: .3 A; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 1574;
STL81004H by Infineon Technologies

STL81004H

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .12 A; Peak Wavelength (nm): 1330; Maximum Forward Voltage: 1.5 V; Maximum Operating Temperature: 85 Cel;
TOLD9150(S) by Toshiba

TOLD9150(S)

Toshiba

LASER DIODE; Peak Wavelength (nm): 690; No. of Functions: 1; Nominal Output Power: 30 W;
TOLD9450MC by Toshiba

TOLD9450MC

Toshiba

LASER DIODE; Size: 1.8 mm; Maximum Threshold Current: 95 mA; Shape: ROUND; Peak Wavelength (nm): 650; No. of Functions: 1;
SDL3140 by Onsemi

SDL3140

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Semiconductor Material: GaAlAs; Peak Wavelength (nm): 790;
NX8571SA549-CA by Renesas Electronics

NX8571SA549-CA

Renesas Electronics

LASER DIODE; Maximum Forward Current: .01 A; Maximum Operating Temperature: 70 Cel; Minimum Operating Temperature: -20 Cel; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1555;
NX8565LE606-BC by Renesas Electronics

NX8565LE606-BC

Renesas Electronics

LASER DIODE; Minimum Operating Temperature: -20 Cel; Maximum Response Time: .000000000125 s; Maximum Operating Temperature: 70 Cel; Maximum Forward Voltage: 2 V; Peak Wavelength (nm): 1561;
SDL3038-011 by Onsemi

SDL3038-011

Onsemi

SDL3038-011 by Onsemi is a 640nm LASER DIODE with AlGaInP material. It operates b/w -10 °C to 40°C, featuring THROUGH HOLE MOUNT. Ideal for applications requiring precise laser technology in various industries.
NDL7740PA by Renesas Electronics

NDL7740PA

Renesas Electronics

LASER DIODE; Mounting Feature: SURFACE MOUNT; Minimum Operating Temperature: -20 Cel; Maximum Operating Temperature: 65 Cel; Maximum Forward Voltage: 1.5 V; Peak Wavelength (nm): 1550;
TOLD322BBC by Toshiba

TOLD322BBC

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Maximum Response Time: .000000001 s; Maximum Operating Temperature: 70 Cel; Maximum Forward Voltage: 1.5 V;
SPLPL90-0 by Infineon Technologies

SPLPL90-0

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Peak Wavelength (nm): 905; Semiconductor Material: InGaAs/GaAs; Spectral Bandwidth: 3 m;
SDL6030-201 by Onsemi

SDL6030-201

Onsemi

SDL6030-201 by Onsemi is an 800nm LASER DIODE with GaAlAs material. It operates b/w -10 °C to 50°C, featuring THROUGH HOLE MOUNT. Ideal for applications requiring precise laser emission in optoelectronics and telecommunications.
SDL3140-001 by Onsemi

SDL3140-001

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 65 Cel; Peak Wavelength (nm): 790; Minimum Operating Temperature: -10 Cel;
SPL2Y81 by Infineon Technologies

SPL2Y81

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Configuration: SINGLE; No. of Functions: 1; Spectral Bandwidth: 2 m;
NX8571SC358-BA-AZ by Renesas Electronics

NX8571SC358-BA-AZ

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 70 Cel; Maximum Forward Current: .3 A; Maximum Forward Voltage: 2.5 V; Semiconductor Material: InGaAsP;
TOLD323ACB by Toshiba

TOLD323ACB

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 1310; Minimum Operating Temperature: -30 Cel; Maximum Forward Voltage: 2 V; Semiconductor Material: InGaAs;
SDL6032-211 by Onsemi

SDL6032-211

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 50 Cel; Peak Wavelength (nm): 830;
DL3147-161 by Onsemi

DL3147-161

Onsemi

DL3147-161 by Onsemi is a 660nm LASER DIODE with AlGaInP material. It operates b/w -10 °C to 70°C, suitable for THROUGH HOLE MOUNT applications like laser pointers and medical devices.