IP4385CX4/LF,135 by NXP Semiconductors | Diodes

Image shown is a representation only.

Manufacturer	NXP Semiconductors
Manufacturer's Part Number	IP4385CX4/LF,135
Description	TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: BOTTOM; Terminal Form: BALL; No. of Terminals: 4; Surface Mount: YES; Package Shape: SQUARE;
Datasheet	IP4385CX4/LF,135 Datasheet
In Stock	1,458

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Config:	SINGLE
Diode Type:	TRANS VOLTAGE SUPPRESSOR DIODE
Maximum Clamping Voltage:	10 V
Sub-Category:	Transient Suppressors
Surface Mount:	YES
Diode Element Material:	SILICON
No. of Terminals:	4
Qualification:	Not Qualified
Terminal Position:	BOTTOM
Package Style (Meter):	GRID ARRAY
Technology:	AVALANCHE
JESD-30 Code:	S-PBGA-B4
Nominal Breakdown Voltage:	7 V
Minimum Breakdown Voltage:	7 V
No. of Elements:	1
Package Shape:	SQUARE
Maximum Power Dissipation:	.7 W
Terminal Form:	BALL
Polarity:	UNIDIRECTIONAL

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,458	$0.022	$32.076

The Vishay Intertechnology LL4148-GS08 is a glass diode with fast recovery time of 0.008 us and max reverse current of 5 uA. Ideal for applications requiring rectification, it has a breakdown voltage of 100 V and can handle a peak forward current of 2 A.

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Diodes Inc. BSS138-7-F is a N-channel FET with 50V DS breakdown voltage, 0.2A max drain current, and 3.5 ohm RDS(on). Ideal for switching applications in small outline packages with matte tin finish, operating up to 150°C peak reflow temp.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Minimum DS Breakdown Voltage: 50 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

MBRS360T3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.63V and a max output current of 3A. It is designed for applications requiring high-speed switching and low power loss, making it suitable for use in various electronic devices.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

SZNUP2105LT1G by Onsemi is a Transient Suppression Device with 2 elements in a common anode configuration. It has a max non-repetitive peak reverse power dissipation of 350W and breakdown voltage of 29.1V. Ideal for applications requiring bidirectional polarity protection, such as automotive electronics and industrial equipment due to its AEC-Q101 compliance and high clamping voltage of 44V.