J112,126 by NXP Semiconductors | Transistors

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	J112,126
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Package Shape: ROUND; Maximum Drain-Source On Resistance: 50 ohm;
Datasheet	J112,126 Datasheet
In Stock	1,474

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	JUNCTION
Transistor Application:	SWITCHING
Sub-Category:	Other Transistors
Surface Mount:	NO
Terminal Finish:	MATTE TIN
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.4 W
Terminal Position:	BOTTOM
Package Style (Meter):	CYLINDRICAL
JESD-30 Code:	O-PBCY-T3
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	THROUGH-HOLE
Operating Mode:	DEPLETION MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	50 ohm
Other Names:	954-J112126 934005270126 J112 AMO-ND 2156-J112126-NXTB NXPNXPJ112,126 J112 AMO
JEDEC-95 Code:	TO-92
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	40 V
Qualification:	Not Qualified

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,474	-	-

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