NXP Semiconductors - J175T/R

  1. Home
  2. NXP Semiconductors - J175T/R
J175T/R by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number J175T/R
Description P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; No. of Elements: 1; Package Body Material: PLASTIC/EPOXY;
Datasheet J175T/R Datasheet
In Stock3,499
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: JUNCTION
Transistor Application: SWITCHING
JEDEC-95 Code: TO-92
Sub-Category: FET General Purpose Small Signal
Polarity or Channel Type: P-CHANNEL
Surface Mount: NO
Terminal Finish: Matte Tin (Sn)
JESD-609 Code: e3
No. of Terminals: 3
Minimum DS Breakdown Voltage: 30 V
Qualification: Not Qualified
Maximum Power Dissipation (Abs): .4 W
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: O-PBCY-W3
No. of Elements: 1
Package Shape: ROUND
Terminal Form: WIRE
Operating Mode: DEPLETION MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: 125 ohm
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
3,499 - -

Popular Products

Category Top Products

FDS6679AZ by Onsemi

FDS6679AZ

Onsemi

FDS6679AZ by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 13A Drain Current, 0.0093 ohm On Resistance, and 745pF Feedback Capacitance. With ENHANCEMENT MODE operation and GULL WING terminals, it offers reliable performance in various electronic circuits.
2N7002DW by Jiangsu Changjiang Electronics Technology

2N7002DW

Jiangsu Changjiang Electronics Technology

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain Current (ID): .115 A; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (Abs) (ID): .115 A;
2N7002BKVL by Nexperia

2N7002BKVL

Nexperia

2N7002BKVL by Nexperia is a N-CHANNEL FET with 60V DS Breakdown Voltage. It's used for SWITCHING applications in ENHANCEMENT MODE. Features include 0.35A Drain Current, 1.6 ohm On Resistance, and -55 to 150 °C Operating Temperature range.
2N7000 by Inter F E T

2N7000

Inter F E T

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; JEDEC-95 Code: TO-226AA; JESD-30 Code: O-PBCY-T3;
BC548B by Texas Instruments

BC548B

Texas Instruments

NPN; Configuration: SINGLE; Surface Mount: NO; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;
ZXM61N03FTA by Diodes Incorporated

ZXM61N03FTA

Diodes Incorporated

ZXM61N03FTA by Diodes Inc. is a N-CHANNEL FET with 30V DS breakdown voltage, 1.4A max drain current, and 0.22 ohm max on resistance. Ideal for switching applications, it operates in enhancement mode with a max temp of 150°C. It comes in a small outline package with gull wing terminals for surface mount assembly.
2N7002W by Changzhou Galaxy Century Microelectronics

2N7002W

Changzhou Galaxy Century Microelectronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Terminal Position: DUAL; Package Shape: RECTANGULAR;
MMBFJ113 by Fairchild Semiconductor

MMBFJ113

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; JESD-609 Code: e3; Maximum Drain-Source On Resistance: 100 ohm;
2N7002 by Itt Semiconductor

2N7002

Itt Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: RECTANGULAR;
2N7002 by Inter F E T

2N7002

Inter F E T

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain-Source On Resistance: 7.5 ohm; Maximum Drain Current (Abs) (ID): .115 A;
BSS123W by Onsemi

BSS123W

Onsemi

BSS123W by Onsemi is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with built-in DIODE and operates in ENHANCEMENT MODE. With a max Power Dissipation of 0.2W and operating temperature up to 150°C, it offers reliable performance in various electronic circuits.
FDV303N-F169 by Onsemi

FDV303N-F169

Onsemi

FDV303N-F169 by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, 0.68A ID, and 0.45 ohm RDS. Ideal for SWITCHING applications in small outline packages with GULL WING terminals. Operating from -55 to 150 °C, it's an ENHANCEMENT MODE transistor with built-in diode.
BSS314PEH6327XTSA1 by Infineon Technologies

BSS314PEH6327XTSA1

Infineon Technologies

BSS314PEH6327XTSA1 by Infineon Technologies is a P-CHANNEL FET with 30V DS Breakdown Voltage and 1.5A ID. It features SINGLE configuration with built-in diode, 0.14 ohm RDS(on), and 11pF Crss. Ideal for applications requiring small signal amplification in compact electronic devices due to its ENHANCEMENT MODE operation and GULL WING terminals.
BSS123 by Siemens

BSS123

Siemens

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; JESD-30 Code: R-PDSO-G3; Transistor Element Material: SILICON;
2N7000 by Zetex Plc

2N7000

Zetex Plc

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Qualification: Not Qualified;
2N7002K by Jiangsu Changjiang Electronics Technology

2N7002K

Jiangsu Changjiang Electronics Technology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Maximum Operating Temperature: 150 Cel; No. of Elements: 1;
2N7002PS,115 by Nexperia

2N7002PS,115

Nexperia

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Terminals: 6;
2N7002DW by Secos

2N7002DW

Secos

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Package Style (Meter): SMALL OUTLINE; Maximum Power Dissipation Ambient: .2 W;
FDG6301N by Fairchild Semiconductor

FDG6301N

Fairchild Semiconductor

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Terminal Position: DUAL; Package Shape: RECTANGULAR;
T2N7002BK,LM(T by Toshiba

T2N7002BK,LM(T

Toshiba

T2N7002BK,LM(T by Toshiba is a N-CHANNEL FET with 60V DS breakdown voltage and 0.4A ID. Ideal for switching applications, it features a built-in diode and resistor in a small outline package. Operating in enhancement mode, it has 1W power dissipation and 1.75 ohm max on-resistance.