NXP Semiconductors - LAE6000Q

  1. Home
  2. NXP Semiconductors - LAE6000Q
LAE6000Q by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number LAE6000Q
Description NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .015 A; Maximum Operating Temperature: 200 Cel;
Datasheet LAE6000Q Datasheet
In Stock3,827
NAME DESCRIPTION
Maximum Collector Current (IC): .015 A
Maximum Power Dissipation (Abs): .15 W
Configuration: SINGLE
No. of Elements: 1
Maximum Operating Temperature: 200 Cel
Sub-Category: Other Transistors
Polarity or Channel Type: NPN
Surface Mount: YES
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
3,827 - -

Popular Products

Category Top Products

TIP32C by Secos

TIP32C

Secos

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;
2N3055 by Powertech

2N3055

Powertech

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
BC807-25 by Vishay Intertechnology

BC807-25

Vishay Intertechnology

Vishay Intertechnology's BC807-25 is a PNP transistor with max power dissipation of 0.35W, min DC current gain of 160, and max collector current of 0.5A. Ideal for applications requiring single configuration transistors in surface mount technology, operating up to 150°C.
TIP125 by Semiconductors

TIP125

Semiconductors

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Terminal Finish: Tin/Lead (Sn/Pb);
TIP142T by Transys Electronics

TIP142T

Transys Electronics

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 10 A; Maximum Operating Temperature: 150 Cel;
2N2905A by Tesla Elektronicke Soucastky

2N2905A

Tesla Elektronicke Soucastky

2N2905A by Tesla Elektronicke Soucastky is a PNP transistor with a maximum power dissipation of 0.6 W and a minimum DC current gain of 50. It operates at a maximum temperature of 175 °C and has a maximum collector current of 0.6 A. It has a nominal transition frequency of 200 MHz and is commonly used in other function applications requiring a single configuration.
2N2222A by Gec Plessey Semiconductors

2N2222A

Gec Plessey Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BFT92WT/R by Philips Semiconductors

BFT92WT/R

Philips Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .035 A; No. of Elements: 1;
BC847B by Itt Components

BC847B

Itt Components

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
BC548C by North American Philips Discrete Products Div

BC548C

North American Philips Discrete Products Div

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
TIP50 by North American Philips Discrete Products Div

TIP50

North American Philips Discrete Products Div

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 5 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;
BC557B by Secos

BC557B

Secos

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 180;
TIP115 by Mospec Semiconductor

TIP115

Mospec Semiconductor

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Maximum Operating Temperature: 150 Cel;
2N4401 by Thomson Consumer Electronics

2N4401

Thomson Consumer Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .6 A;
BC847B by Philips Semiconductors

BC847B

Philips Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
BC337-40 by Texas Instruments

BC337-40

Texas Instruments

BC337-40 by Texas Instruments is an NPN transistor with a single configuration. It has a max power dissipation of 0.625W, min DC current gain of 250, and max collector current of 0.8A. Ideal for applications requiring high current amplification in circuits operating up to 150°C.
2N3055 by Plessey Semiconductors Discrete Components Div

2N3055

Plessey Semiconductors Discrete Components Div

2N3055 by Plessey Semiconductors is an NPN transistor with a max power dissipation of 115W and a min DC current gain of 20. It can handle a max collector current of 15A and has a nominal transition frequency of 2.5MHz. This transistor is commonly used in various applications requiring high power amplification or switching capabilities.
2N2907AUA by New England Semiconductor

2N2907AUA

New England Semiconductor

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Maximum Collector Current (IC): .6 A; No. of Elements: 1;
BC857B by Shanghai Lunsure Electronic Technology

BC857B

Shanghai Lunsure Electronic Technology

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
TIP31C by General Electric Solid State

TIP31C

General Electric Solid State

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 3 A;