NXP Semiconductors - LCE2009SA

LCE2009SA by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number LCE2009SA
Description NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .25 A; Maximum Operating Temperature: 200 Cel; Minimum DC Current Gain (hFE): 15;
Datasheet LCE2009SA Datasheet
In Stock1,941
NAME DESCRIPTION
Minimum Power Gain (Gp): 9 dB
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Maximum Collector Current (IC): .25 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Polarity or Channel Type: NPN
Surface Mount: NO
Minimum DC Current Gain (hFE): 15
No. of Terminals: 4
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 16 V
Terminal Position: RADIAL
Package Style (Meter): POST/STUD MOUNT
JESD-30 Code: O-CRPM-F4
No. of Elements: 1
Package Shape: ROUND
Terminal Form: FLAT
Additional Features: HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS
Highest Frequency Band: S BAND
Maximum Operating Temperature: 200 Cel
Maximum Power Dissipation Ambient: 3.5 W
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