NXP Semiconductors - LTE21015RTRAY

  1. Home
  2. NXP Semiconductors - LTE21015RTRAY
LTE21015RTRAY by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number LTE21015RTRAY
Description NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .25 A; Package Shape: ROUND; Minimum Power Gain (Gp): 8.1 dB;
Datasheet LTE21015RTRAY Datasheet
In Stock3,148
NAME DESCRIPTION
Minimum Power Gain (Gp): 8.1 dB
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Maximum Collector Current (IC): .25 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Polarity or Channel Type: NPN
Surface Mount: NO
No. of Terminals: 2
Qualification: Not Qualified
Terminal Position: RADIAL
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: O-CRFM-F2
No. of Elements: 1
Package Shape: ROUND
Terminal Form: FLAT
Highest Frequency Band: S BAND
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
3,148 - -

Popular Products

Category Top Products

SD4017 by STMicroelectronics

SD4017

STMicroelectronics

SD4017 by STMicroelectronics is a NPN RF BJT transistor with 6 terminals, suitable for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. It has a max power dissipation of 88W, operates at up to 200 °C, and can handle a collector current of 0.06A.
BDP948H6433XTMA1 by Infineon Technologies

BDP948H6433XTMA1

Infineon Technologies

Infineon's BDP948H6433XTMA1 is a PNP RF Power BJT with 45V VCE, 3A IC, and 100MHz fT. Ideal for amplifier applications, it comes in a small outline package with gull wing terminals for surface mount assembly.
SD1895-03 by STMicroelectronics

SD1895-03

STMicroelectronics

STMicroelectronics' SD1895-03 is a NPN RF Power BJT with 37.2W power dissipation, suitable for L Band applications. Featuring 3A max collector current and 15V max collector-emitter voltage, it is designed for high-frequency operations up to 200 °C in a plastic/epoxy package.
MAX2602ESA+ by Analog Devices

MAX2602ESA+

Analog Devices

MAX2602ESA+ by Analog Devices is a NPN BJT transistor with 8 terminals, operating at 150°C. It has a max collector-emitter voltage of 15V and can handle a collector current of 1.2A. Ideal for amplifier applications in the ultra-high frequency band due to its small outline package style.
BLS2731-110TRAY by NXP Semiconductors

BLS2731-110TRAY

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-CDFM-F2; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Terminal Form: FLAT;
BFQ290 by NXP Semiconductors

BFQ290

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 400 MHz; Maximum Power Dissipation (Abs): 4 W; Maximum Collector Current (IC): .25 A;
LLE16045XTRAY by NXP Semiconductors

LLE16045XTRAY

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .05 A; Terminal Form: FLAT; Terminal Position: DUAL;
BLV93 by NXP Semiconductors

BLV93

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 4000 MHz; Maximum Collector Current (IC): 1.6 A; Maximum Operating Temperature: 200 Cel;
934054887114 by NXP Semiconductors

934054887114

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Transistor Application: AMPLIFIER; No. of Terminals: 2;
BLW60 by NXP Semiconductors

BLW60

NXP Semiconductors

BLW60 by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max collector current of 8 A, operates up to 18 V, and offers a min power gain of 5 dB in very high frequency bands. Its flat, round package ensures easy mounting.
2SC2173 by Toshiba

2SC2173

Toshiba

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 6 A; Transistor Element Material: SILICON; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
AM0912-300 by STMicroelectronics

AM0912-300

STMicroelectronics

AM0912-300 by STMicroelectronics is a NPN RF Power BJT with 7 dB min power gain, ideal for switching applications in L Band. It has a max power dissipation of 940 W and can handle up to 24 A collector current. The transistor is surface mountable and operates at temperatures up to 250 °C.
SD1458 by STMicroelectronics

SD1458

STMicroelectronics

SD1458 by STMicroelectronics is a NPN RF Power BJT with 6 terminals and a max power dissipation of 140W. Ideal for amplifier applications in the VHF band, it has a max collector-emitter voltage of 35V and operates at up to 175 °C.
AM1214-300 by STMicroelectronics

AM1214-300

STMicroelectronics

STMicroelectronics' AM1214-300 is an NPN RF BJT with 6.3 dB min power gain, ideal for L Band applications. It has a max power dissipation of 730W and can handle up to 18.75A collector current. Suitable for switching purposes, this transistor operates at temperatures up to 250 °C in a ceramic-metal-sealed co-fired package.
BLX95 by NXP Semiconductors

BLX95

NXP Semiconductors

BLX95 by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a min power gain of 4.5 dB, operates at frequencies up to 900 MHz, and supports a max collector current of 3 A. Ideal for ultra-high frequency circuits, it ensures reliable performance in compact designs.
MRF224 by New Jersey Semiconductor Products

MRF224

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 7 A; Qualification: Not Qualified;
MRF6414 by NXP Semiconductors

MRF6414

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 134 W; Maximum Collector Current (IC): 6 A; Additional Features: WITH EMITTER BALLASTING RESISTORS;
PTB23006U by NXP Semiconductors

PTB23006U

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 11 W; Maximum Collector Current (IC): .75 A; Transistor Application: AMPLIFIER;
MRF426 by Tyco Electronics M/a-com

MRF426

Tyco Electronics M/a-com

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 3 A; Transistor Element Material: SILICON; Terminal Form: FLAT;
AM80814-005 by STMicroelectronics

AM80814-005

STMicroelectronics

STMicroelectronics' AM80814-005 is a NPN RF BJT transistor with 8.5 dB min power gain, suitable for L Band applications. It has a max power dissipation of 23 W and operates at temperatures up to 250 °C, making it ideal for high-power switching in various electronic devices.