MCM36F9DG10 by NXP Semiconductors | Memory ICs

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	MCM36F9DG10
Description	SRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 144; Package Shape: RECTANGULAR; Organization: 512KX36; JESD-30 Code: R-XDMA-N144;
Datasheet	MCM36F9DG10 Datasheet
In Stock	3,335

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Organization:	512KX36
Minimum Supply Voltage (Vsup):	3.135 V
Surface Mount:	NO
No. of Terminals:	144
No. of Words:	524288 words
Terminal Position:	DUAL
Package Style (Meter):	MICROELECTRONIC ASSEMBLY
Technology:	BICMOS
JESD-30 Code:	R-XDMA-N144
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Operating Mode:	SYNCHRONOUS
Maximum Operating Temperature:	70 Cel
Memory Density:	18874368 bit
Memory IC Type:	SRAM MODULE
Minimum Operating Temperature:	0 Cel
Memory Width:	36
No. of Functions:	1
Qualification:	Not Qualified
Maximum Access Time:	10 ns
No. of Words Code:	512K
Nominal Supply Voltage / Vsup (V):	3.3
Additional Features:	FLOW-THROUGH ARCHITECTURE
Parallel or Serial:	PARALLEL
Temperature Grade:	COMMERCIAL
Maximum Supply Voltage (Vsup):	3.6 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
3,335	-	-

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Terminal Form: GULL WING;

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Drain Current (ID): .115 A; Maximum Drain-Source On Resistance: 7.5 ohm;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Finish: Matte Tin (Sn) - annealed; Transistor Element Material: SILICON;

LM358D-T by NXP Semiconductors is a dual operational amplifier with 70dB CMRR, 1000kHz unity gain bandwidth, and 9000uV max input offset voltage. Widely used in commercial applications due to its small outline package and low bias current of 0.5uA.

2N7002,215 by NXP Semiconductors is a small signal N-CHANNEL FET with a min DS breakdown voltage of 60V and max drain current of 0.3A. It is used for switching applications in enhancement mode, operates b/w -65 to 150 °C, and has a max power dissipation of 0.2W.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Vishay Intertechnology's BAV99 diode features a max forward voltage of 1.3V and a max output current of 0.15A, making it ideal for rectification applications. With a small outline package style and dual terminal position, this series-connected diode is designed for surface mount usage in various electronic circuits with an operating temperature range from -55°C to 150°C.

KEMET C1210C104K5RACTU is a ceramic capacitor with 0.1uF capacitance, rated for 50V. It has X7R temperature characteristics and ±10% tolerance, suitable for surface mount applications in a wide temperature range from -55°C to 125°C. Its compact rectangular package makes it ideal for various electronic devices.

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Element Material: SILICON; Moisture Sensitivity Level (MSL): 1;