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Manufacturer | NXP Semiconductors |
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Manufacturer's Part Number | MCM69P819ZP3.8R |
Description | CACHE SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 119; Package Code: BGA; Package Shape: RECTANGULAR; Additional Features: LINEAR/INTERLEAVED BURST SEQUENCE; INTERNALLY SELF-TIMED WRITE CYCLE; BYTE/GLOBAL WRITE CONTROL; |
Datasheet | MCM69P819ZP3.8R Datasheet |
In Stock | 3,165 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Organization: | 256KX18 |
Output Characteristics: | 3-STATE |
Maximum Seated Height: | 2.4 mm |
Minimum Supply Voltage (Vsup): | 3.135 V |
Surface Mount: | YES |
Terminal Finish: | TIN LEAD |
No. of Terminals: | 119 |
No. of Words: | 262144 words |
Terminal Position: | BOTTOM |
Package Style (Meter): | GRID ARRAY |
Technology: | MOS |
JESD-30 Code: | R-PBGA-B119 |
Package Shape: | RECTANGULAR |
Terminal Form: | BALL |
Operating Mode: | SYNCHRONOUS |
Maximum Operating Temperature: | 70 Cel |
Package Code: | BGA |
Width: | 14 mm |
No. of Ports: | 1 |
Memory Density: | 4718592 bit |
Memory IC Type: | CACHE SRAM |
JESD-609 Code: | e0 |
Minimum Operating Temperature: | 0 Cel |
Memory Width: | 18 |
Output Enable: | YES |
No. of Functions: | 1 |
Qualification: | Not Qualified |
Length: | 22 mm |
Maximum Access Time: | 3.8 ns |
No. of Words Code: | 256K |
Nominal Supply Voltage / Vsup (V): | 3.3 |
Additional Features: | LINEAR/INTERLEAVED BURST SEQUENCE; INTERNALLY SELF-TIMED WRITE CYCLE; BYTE/GLOBAL WRITE CONTROL |
Parallel or Serial: | PARALLEL |
Terminal Pitch: | 1.27 mm |
Temperature Grade: | COMMERCIAL |
Maximum Supply Voltage (Vsup): | 3.6 V |