NXP Semiconductors - MDE6IC7120GNR1

  1. Home
  2. NXP Semiconductors - MDE6IC7120GNR1
MDE6IC7120GNR1 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number MDE6IC7120GNR1
Description NARROW BAND HIGH POWER; JESD-609 Code: e3; Maximum Voltage Standing Wave Ratio: 10; Maximum Operating Frequency: 768 MHz; Minimum Operating Frequency: 728 MHz; Terminal Finish: Matte Tin (Sn);
In Stock350
NAME DESCRIPTION
Maximum Voltage Standing Wave Ratio: 10
Construction: COMPONENT
Maximum Input Power (CW): 30 dBm
Minimum Operating Frequency: 728 MHz
Characteristic Impedance: 50 ohm
Maximum Operating Frequency: 768 MHz
RF or Microwave Device Type: NARROW BAND HIGH POWER
Terminal Finish: Matte Tin (Sn)
JESD-609 Code: e3
Gain: 32 dB
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
350 - -

Popular Products

Category Top Products

SPF-5122Z by Sirenza Microdevices

SPF-5122Z

Sirenza Microdevices

WIDE BAND MEDIUM POWER; Minimum Operating Frequency: 100 MHz; Maximum Operating Frequency: 4000 MHz; Maximum Operating Temperature: 85 Cel; Maximum Input Power (CW): 27 dBm; Gain: 6.4 dB;
PMA3-83LN+ by Mini-circuits

PMA3-83LN+

Mini-circuits

The Mini-circuits PMA3-83LN+ is a wide band low power RF amplifier with a gain of 19.9 dB, suitable for frequencies ranging from 500 MHz to 8000 MHz. It can handle a max input power of 16 dBm and operates in temperatures from -40°C to 105°C. Ideal for RF and microwave applications requiring high gain and broad frequency coverage.
GALI-21 by Mini-circuits

GALI-21

Mini-circuits

GALI-21 by Mini-circuits is a wide band low power RF amplifier with 11.5 dB gain, operating from 0 to 8000 MHz. It can handle up to 15 dBm CW input power and has a VSWR of 2.5, making it suitable for various RF and microwave applications requiring high performance in temperatures ranging from -45°C to 85°C.
AG303-86G by Qorvo

AG303-86G

Qorvo

The Qorvo AG303-86G is a wide band low power RF amplifier with 20.4 dB gain, operating from 0 to 6000 MHz. It has a max input power of 10 dBm and operates on a 5V power supply. Ideal for RF applications requiring high gain in the -40°C to 85°C temperature range.
HMC606LC5TR by Analog Devices

HMC606LC5TR

Analog Devices

Analog Devices' HMC606LC5TR is a wide band low power RF amplifier with 9.5 dB gain, operating from 2-18000 MHz. It has a max input power of 15 dBm and operates on a 5V supply with 95 mA current draw. Ideal for RF and microwave applications requiring high frequency amplification in compact designs.
HMC943APM5E by Analog Devices

HMC943APM5E

Analog Devices

HMC943APM5E by Analog Devices is a wide band medium power RF amplifier with 20.5 dB gain, operating frequency range of 24-34 GHz, and max input power of 20 dBm. It has a VSWR of 7 and operates b/w -40 to +85°C. Ideal for RF & microwave applications requiring high gain and broad frequency coverage.
QPA1019TR7 by Qorvo

QPA1019TR7

Qorvo

Qorvo's QPA1019TR7 is a wide band high power RF amplifier with 30 dB gain, operating from 4.5 GHz to 7 GHz. It can handle up to 28 dBm CW input power and has gold terminal finish. Ideal for RF & microwave applications requiring high power amplification in temperatures ranging from -40°C to 85°C.
HMC963LC4TR by Hittite Microwave

HMC963LC4TR

Hittite Microwave

WIDE BAND LOW POWER; Construction: COMPONENT; Maximum Operating Frequency: 26500 MHz; Minimum Operating Frequency: 6000 MHz; Maximum Operating Temperature: 85 Cel; Maximum Input Power (CW): 0 dBm;
MSA-0686-BLKG by Agilent Technologies

MSA-0686-BLKG

Agilent Technologies

WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 13 dBm; Construction: COMPONENT; Minimum Operating Frequency: 0 MHz; JESD-609 Code: e3;
MGA-23003-TR1G by Broadcom

MGA-23003-TR1G

Broadcom

Broadcom's MGA-23003-TR1G is a GAAS RF amplifier with 32dB gain, operating b/w 3.3-3.8GHz. It has a max input power of 15dBm and is ideal for narrowband medium-power applications in the RF & Microwave field.
RF3827SR by Rf Micro Devices

RF3827SR

Rf Micro Devices

WIDE BAND MEDIUM POWER; Maximum Voltage Standing Wave Ratio: 20; Construction: COMPONENT; Gain: 20.5 dB; Maximum Input Power (CW): 13 dBm; Additional Features: LOW NOISE;
HMC863ALC4TR by Analog Devices

HMC863ALC4TR

Analog Devices

Analog Devices' HMC863ALC4TR is a wide band medium power RF amplifier with 20.5 dB gain, operating b/w 24-29.5 GHz. It can handle up to 26 dBm CW input power and has a VSWR of 7, making it ideal for high-frequency applications in RF and microwave systems.
MAAM-011290-DIE by M/a-com Technology Solutions

MAAM-011290-DIE

M/a-com Technology Solutions

MAAM-011290-DIE by M/a-com Technology Solutions is a wide band medium power RF amplifier with 16.5 dB gain, operating from 5-20 GHz. It has a max input power of 10 dBm and VSWR of 1.58, suitable for surface mount applications in RF & microwave systems.
RFPA3800TR13 by Rf Micro Devices

RFPA3800TR13

Rf Micro Devices

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Additional Features: LOW NOISE;
HMC505LP4 by Hittite Microwave

HMC505LP4

Hittite Microwave

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; JESD-609 Code: e0;
QPL9547TR7 by Qorvo

QPL9547TR7

Qorvo

QPL9547TR7 by Qorvo is a wide band low power RF amplifier with 17.5 dB gain, operating from 100 MHz to 6000 MHz. It has a max input power of 22 dBm and VSWR of 1.54, suitable for surface mount applications in RF & microwave systems requiring high performance amplification.
HMC409LP4E by Hittite Microwave

HMC409LP4E

Hittite Microwave

NARROW BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Gain: 28 dB;
CMPA5585030F by Wolfspeed

CMPA5585030F

Wolfspeed

WIDE BAND LOW POWER;
TQP3M9018 by Qorvo

TQP3M9018

Qorvo

The Qorvo TQP3M9018 is a wide band medium power RF amplifier with 19 dB gain and 50 ohm impedance. It operates from 50 MHz to 4000 MHz, handling up to 23 dBm CW input power. This component is ideal for applications requiring high frequency amplification in plastic/epoxy packages.
HMC429LP4ETR by Hittite Microwave

HMC429LP4ETR

Hittite Microwave

NARROW BAND LOW POWER; Maximum Voltage Standing Wave Ratio: 2; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 85 Cel; Construction: COMPONENT; Maximum Operating Frequency: 5000 MHz;