NXP Semiconductors - MHL21336N

  1. Home
  2. NXP Semiconductors - MHL21336N
MHL21336N by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number MHL21336N
Description NARROW BAND HIGH POWER; Package Body Material: METAL; Maximum Operating Frequency: 2170 MHz; Maximum Operating Temperature: 100 Cel; Minimum Operating Frequency: 2110 MHz; Maximum Voltage Standing Wave Ratio: 1.5;
Datasheet MHL21336N Datasheet
In Stock1,545
NAME DESCRIPTION
Package Body Material: METAL
Construction: COMPONENT
Minimum Operating Frequency: 2110 MHz
Sub-Category: RF/Microwave Amplifiers
Maximum Supply Current: 525 mA
Minimum Operating Temperature: -20 Cel
No. of Functions: 1
Maximum Voltage Standing Wave Ratio: 1.5
Maximum Input Power (CW): 5 dBm
Package Equivalence Code: MOT CASE 301AP-02
Characteristic Impedance: 50 ohm
Maximum Operating Temperature: 100 Cel
Maximum Operating Frequency: 2170 MHz
RF or Microwave Device Type: NARROW BAND HIGH POWER
Gain: 30 dB
Power Supplies (V): 26
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,545 - -

Popular Products

Category Top Products

MMG3014NT1 by Freescale Semiconductor

MMG3014NT1

Freescale Semiconductor

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Power Supplies (V): 5;
GALI-21 by Mini-circuits

GALI-21

Mini-circuits

GALI-21 by Mini-circuits is a wide band low power RF amplifier with 11.5 dB gain, operating from 0 to 8000 MHz. It can handle up to 15 dBm CW input power and has a VSWR of 2.5, making it suitable for various RF and microwave applications requiring high performance in temperatures ranging from -45°C to 85°C.
MGA-62563-TR2G by Agilent Technologies

MGA-62563-TR2G

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Package Equivalence Code: TSSOP6,.08;
BGU7004,115 by NXP Semiconductors

BGU7004,115

NXP Semiconductors

The NXP Semiconductors BGU7004,115 is a RF & Microwave Amplifier with 6 terminals and AEC-Q100 screening. Operating voltage of 1.8V, max supply current of 14.4mA, and temp range from -40 to 125°C make it ideal for automotive applications. Its surface mount package body material is plastic/epoxy with tin terminal finish.
ADL8107ACPZN by Analog Devices

ADL8107ACPZN

Analog Devices

ADL8107ACPZN by Analog Devices is a PHEMT technology RF amplifier with 18 dB gain, operating frequency range of 6-18 GHz, and max input power of 22 dBm. Ideal for wideband low-power applications in RF and microwave systems due to its high performance and compact surface-mount construction.
SGL0363Z by Qorvo

SGL0363Z

Qorvo

Qorvo's SGL0363Z is a wide band low power RF amplifier with 15 dB gain and 50 ohm impedance. It operates from 5 MHz to 2 GHz, handling up to 18 dBm CW input power. Ideal for RF applications requiring high performance in temperatures ranging from -40°C to 85°C.
SMA3103-TL-E by Sanyo Semiconductor

SMA3103-TL-E

Sanyo Semiconductor

WIDE BAND LOW POWER;
LT5524EFE#PBF by Linear Technology

LT5524EFE#PBF

Linear Technology

WIDE BAND LOW POWER; Maximum Operating Temperature: 85 Cel; JESD-609 Code: e3; Construction: COMPONENT; Gain: 4.5 dB; Characteristic Impedance: 50 ohm;
HMC8325-SX by Analog Devices

HMC8325-SX

Analog Devices

Analog Devices' HMC8325-SX is a PHEMT RF amplifier with 22 terminals, operating from 71-86 GHz. It offers a gain of 19.5 dB and requires a 3V power supply, drawing a max current of 50 mA. Ideal for wideband low-power applications in RF and microwave systems.
TQP3M9037 by Qorvo

TQP3M9037

Qorvo

TQP3M9037 by Qorvo is a wide band medium power RF amplifier with 18.5 dB gain, operating from 700 MHz to 6000 MHz. It has a max input power of 22 dBm and operates at temperatures ranging from -40°C to 105°C. Ideal for applications requiring high frequency amplification in RF and microwave systems.
HMC565LC5 by Analog Devices

HMC565LC5

Analog Devices

Analog Devices' HMC565LC5 is a wide band low power RF amplifier with 16 dB gain and 50 ohm impedance. Operating from 6-20 GHz, it handles up to 10 dBm CW input power. Ideal for applications requiring high frequency amplification in compact designs.
GALI-51+ by Mini-circuits

GALI-51+

Mini-circuits

GALI-51+ by Mini-circuits is a wide band low power RF amplifier with 14 dB gain and 1.7 VSWR. It operates from 0 to 4000 MHz, suitable for various RF applications. With a compact plastic/epoxy package, it can handle up to 13 dBm input power and supports surface mounting.
HMC441LC3BTR by Hittite Microwave

HMC441LC3BTR

Hittite Microwave

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Package Equivalence Code: LCC12,.12SQ,20;
HMC794LP3ETR by Hittite Microwave

HMC794LP3ETR

Hittite Microwave

WIDE BAND LOW POWER;
QPA1011D by Qorvo

QPA1011D

Qorvo

WIDE BAND HIGH POWER;
MMZ09332BT1 by Freescale Semiconductor

MMZ09332BT1

Freescale Semiconductor

NARROW BAND MEDIUM POWER; Maximum Input Power (CW): 29 dBm; Minimum Operating Frequency: 130 MHz; Characteristic Impedance: 50 ohm; Gain: 28.7 dB; Maximum Operating Frequency: 1000 MHz;
RF3827SR by Rf Micro Devices

RF3827SR

Rf Micro Devices

WIDE BAND MEDIUM POWER; Maximum Voltage Standing Wave Ratio: 20; Construction: COMPONENT; Gain: 20.5 dB; Maximum Input Power (CW): 13 dBm; Additional Features: LOW NOISE;
HMC498LC4TR by Analog Devices

HMC498LC4TR

Analog Devices

HMC498LC4TR by Analog Devices is a wide band medium power RF amplifier with 18 dB gain, operating from 17-24 GHz. It has a max input power of 10 dBm and operates on a 5V power supply. Ideal for RF and microwave applications requiring high performance amplification in a compact ceramic package.
HMC451LP3ETR by Analog Devices

HMC451LP3ETR

Analog Devices

HMC451LP3ETR by Analog Devices is a GAAS RF amplifier with 12.5 dB gain, operating from 5V supply at frequencies ranging from 5-18 GHz. With a max input power of 10 dBm, it's ideal for wideband low-power applications in RF and microwave systems requiring surface mount components.
HMC372LP3ETR by Hittite Microwave

HMC372LP3ETR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Temperature: 85 Cel;