NXP Semiconductors - MHT2012NT1

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Temperature: -40 Cel;

WIDE BAND LOW POWER; Construction: COMPONENT; Minimum Operating Temperature: -40 Cel; Maximum Input Power (CW): 10 dBm; Maximum Operating Temperature: 85 Cel; Minimum Operating Frequency: 5000 MHz;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Temperature: 85 Cel;

Qorvo's SPF5043ZSR is a GAAS RF amplifier with 11.4 dB gain, operating from 50 MHz to 4000 MHz. It has a max input power of 25 dBm and operates at temperatures ranging from -40°C to 85°C. This wide band low power device is ideal for applications requiring surface mount components in RF and microwave systems.

TGM2635-CP by Qorvo is a wide band high power RF amplifier with 26 dB gain, operating from 7900 MHz to 11000 MHz. It has a max input power of 33 dBm and VSWR of 3, suitable for surface mount applications in RF & microwave systems. Operating temperature ranges from -40°C to 85°C.

WIDE BAND LOW POWER; Terminal Finish: TIN BISMUTH; JESD-609 Code: e6;

SGA3563Z by Qorvo is a wide band low power RF amplifier with 19.5 dB gain, operating from 0 to 5000 MHz. It has a max input power of 18 dBm and operates at temperatures ranging from -40 to 85°C. Ideal for applications requiring high frequency amplification in RF & microwave systems.

WIDE BAND LOW POWER; Maximum Operating Frequency: 6000 MHz; Construction: COMPONENT; Characteristic Impedance: 50 ohm; Maximum Voltage Standing Wave Ratio: 1.2; Minimum Operating Frequency: 100 MHz;

NARROW BAND LOW POWER;

WIDE BAND MEDIUM POWER; JESD-609 Code: e3; Gain: 23 dB; Terminal Finish: Matte Tin (Sn); Construction: COMPONENT; Maximum Input Power (CW): 20 dBm;

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 10; Package Body Material: CERAMIC; Technology: GAAS; Power Supplies (V): 7;

HMC8412LP2FETR by Analog Devices is a wide band low power RF amplifier with 12 dB gain, operating from 400 MHz to 11 GHz. It has a max input power of 25 dBm and VSWR of 1.375, suitable for applications requiring high frequency amplification in RF & microwave systems. With a compact surface mount construction and operating temperatures from -40°C to 85°C, it offers reliable performance in various environments.

WIDE BAND LOW POWER;

HMC499LC4 by Analog Devices is a ceramic-packaged RF amplifier with a wide band medium power capability. It operates at frequencies ranging from 21 GHz to 32 GHz, providing a gain of 9 dB. This component is suitable for surface mount applications and can handle a max input power of 20 dBm.

Qorvo's NBB-310-T1 is a ceramic RF amplifier with 20 dBm CW input power, 9 dB gain, and 50 ohm impedance. Ideal for wide band low power applications from 0 to 12000 MHz, it operates b/w -45°C to 85°C. Suitable for surface mount installations with a voltage supply of 5V.

Analog Devices' HMC311LP3ETR is a GAAS RF amplifier with 12dB gain, 50 ohm impedance, and 10 dBm CW input power. It operates from 0 to 6000 MHz, drawing 74mA at 5V. Ideal for wideband low-power applications in temperatures ranging from -40°C to +85°C.

Broadcom's MGA-30889-BLKG is a GAAS RF amplifier with 14.6 dB gain, operating from 40 MHz to 2600 MHz. It has a max input power of 20 dBm and requires a 5V power supply, making it ideal for wideband low-power applications in RF and microwave systems. The component features surface mounting and matte tin terminals, with a characteristic impedance of 50 ohms.

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Package Equivalence Code: SL,4GW-LD,.145CIR;

RF/Microwave Amplifiers; No. of Terminals: 8; Package Body Material: METAL; Technology: HYBRID; Screening Level: 38535Q/M;38534H;883B; No. of Functions: 1;

WIDE BAND LOW POWER; Minimum Operating Frequency: 100 MHz; Characteristic Impedance: 50 ohm; Construction: COMPONENT; Maximum Voltage Standing Wave Ratio: 2; Maximum Input Power (CW): 13 dBm;