NXP Semiconductors - MHW1304L

ZHL-1-2W by Mini-circuits is a COAXIAL RF amplifier with 29 dB Gain, 10 dBm CW input power, and VSWR of 2. Ideal for wideband high-power applications from 5 MHz to 500 MHz. Operating temperature range: -20°C to +65°C.

NARROW BAND LOW POWER; Terminal Finish: MATTE TIN; JESD-609 Code: e3;

HMC409LP4ETR by Analog Devices is a RF amplifier with 28 dB gain, operating frequency range of 3.3-3.8 GHz, and max input power of 10 dBm. It is designed for narrowband medium power applications in RF & microwave systems requiring a characteristic impedance of 50 ohms. The component features a surface mount package body material made of plastic/epoxy, suitable for temperatures ranging from -40 to 85°C.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Gain: 11 dB;

The NXP Semiconductors BGU8009 is a narrow band low power RF amplifier with a gain of 17.6 dB, operating b/w 1559-1610 MHz. It can handle up to 10 dBm CW input power and has an impedance of 50 ohm. Ideal for RF and microwave applications requiring high gain amplification in a compact form factor.

NARROW BAND HIGH POWER;

TQP3M9008 by Qorvo is a wide band medium power RF amplifier with 19 dB gain and 50 ohm impedance. It operates from 50 MHz to 4000 MHz, with a max input power of 23 dBm. Ideal for RF applications requiring high performance in plastic/epoxy package.

WIDE BAND HIGH POWER; Terminal Finish: Gold (Au); JESD-609 Code: e4;

Mini-circuits' PHA-13LN+ is a wideband low power RF amplifier with 20.2 dB gain, suitable for frequencies ranging from 1 MHz to 1000 MHz. It can handle up to 8 dBm CW input power and operates b/w -40°C to 105°C, making it ideal for various RF and microwave applications.

Broadcom's MSA-1105 is a RF & Microwave Amplifier with 13 dBm CW input power, 1.7 VSWR, and 50 ohm impedance. Ideal for wide band low power applications from 50 MHz to 1300 MHz, it operates b/w -25°C to 85°C with a max supply current of 70 mA.

WIDE BAND LOW POWER; JESD-609 Code: e3; Terminal Finish: Tin (Sn);

Qorvo's QPA2735TR7X is a GAAS RF amplifier with 26dB gain, operating from 13.75-18 GHz. It has a max input power of 20 dBm and operates on a 3.5V supply, ideal for wideband low-power applications in RF & microwave systems. The component features surface mounting and a plastic/epoxy package body material.

ERA-50SM+ by Mini-circuits is a wide band low power RF amplifier with 16 dB gain, operating from 0 to 1500 MHz. It has a max input power of 13 dBm and VSWR of 1.2, making it ideal for RF & microwave applications requiring surface mount amplification in the temperature range of -45 to 85°C.

HMC794LP3E by Analog Devices is a wide band low power RF amplifier with a max operating frequency of 2 GHz and characteristic impedance of 50 ohm. It can handle up to 13 dBm CW input power, making it suitable for various RF and microwave applications requiring high performance in temperature range from -40°C to 85°C.

HMC392ALC4 by Analog Devices is a RF & Microwave Amplifier with 20 dBm CW input power, 14.5 dB gain, and 3500-8000 MHz frequency range. It operates at temperatures from -40 to 85°C and requires a 5V power supply. Ideal for wideband low-power applications due to its GaAs technology and surface mounting feature.

WIDE BAND LOW POWER;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Temperature: 85 Cel;

Analog Devices' HMC506LP4E is a RF amplifier with 50 ohm impedance, operating frequency range of 7800-8700 MHz, and VSWR of 2. It is ideal for narrow band low power applications in temperatures ranging from -40 to 85°C.

AH202-F by Triquint Semiconductor is a wide band medium power RF amplifier with 14 dB gain. It operates b/w 30 MHz to 2200 MHz, handling up to 16 dBm CW input power. This component, housed in a plastic/epoxy package, is ideal for applications requiring high frequency amplification in RF and microwave systems.

WIDE BAND HIGH POWER;