NXP Semiconductors - MMBZ18VCL/DG,215

MMBZ18VCL/DG,215 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number MMBZ18VCL/DG,215
Description TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Datasheet MMBZ18VCL/DG,215 Datasheet
In Stock2,928
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Forward Voltage (VF): .9 V
Config: COMMON CATHODE, 2 ELEMENTS
Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE
Surface Mount: YES
Maximum Reverse Current: .005 uA
No. of Terminals: 3
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
Maximum Non Repetitive Peak Reverse Power Dissipation: 40 W
Technology: AVALANCHE
JESD-30 Code: R-PDSO-G3
Minimum Breakdown Voltage: 17.1 V
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Polarity: UNIDIRECTIONAL
Maximum Operating Temperature: 150 Cel
Maximum Breakdown Voltage: 18.9 V
Reverse Test Voltage: 14.5 V
Maximum Repetitive Peak Reverse Voltage: 14.5 V
Maximum Clamping Voltage: 25 V
JEDEC-95 Code: TO-236AB
Minimum Operating Temperature: -55 Cel
Diode Element Material: SILICON
Nominal Breakdown Voltage: 18 V
Maximum Power Dissipation: .35 W
Reference Standard: AEC-Q101; IEC-60134; IEC-61000-4-2; IEC-61643-321
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