NXP Semiconductors - MMRF1008GHR5

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MMRF1008GHR5 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number MMRF1008GHR5
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: L BAND; Case Connection: SOURCE; Minimum DS Breakdown Voltage: 110 V;
Datasheet MMRF1008GHR5 Datasheet
In Stock1,614
NAME DESCRIPTION
Minimum Power Gain (Gp): 19 dB
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Maximum Time At Peak Reflow Temperature (s): 40
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Maximum Feedback Capacitance (Crss): .46 pF
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 2
Minimum DS Breakdown Voltage: 110 V
Terminal Position: DUAL
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-CDFM-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: L BAND
Maximum Operating Temperature: 225 Cel
Case Connection: SOURCE
Peak Reflow Temperature (C): 260
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