NXP Semiconductors - MPSA06-AMMO

  1. Home
  2. NXP Semiconductors - MPSA06-AMMO
MPSA06-AMMO by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number MPSA06-AMMO
Description NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Maximum Collector-Emitter Voltage: 80 V;
Datasheet MPSA06-AMMO Datasheet
In Stock3,072
NAME DESCRIPTION
Nominal Transition Frequency (fT): 100 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .5 A
Configuration: SINGLE
Transistor Element Material: SILICON
JEDEC-95 Code: TO-92
Polarity or Channel Type: NPN
Surface Mount: NO
Minimum DC Current Gain (hFE): 50
No. of Terminals: 3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 80 V
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: O-PBCY-T3
No. of Elements: 1
Package Shape: ROUND
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 150 Cel
Maximum VCEsat: .25 V
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
3,072 - -

Popular Products

Category Top Products

BC547C by NXP Semiconductors

BC547C

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A;
BC547CG by Onsemi

BC547CG

Onsemi

BC547CG by Onsemi is a NPN BJT with 3 terminals. It has a max power dissipation of 0.625W, hFE of 420, and fT of 300MHz. Ideal for amplifier applications due to its max collector-emitter voltage of 45V and max collector current of 0.1A.
2N3906 by Motorola

2N3906

Motorola

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; JEDEC-95 Code: TO-92;
MMBT2907A by Samsung

MMBT2907A

Samsung

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .6 A;
ULN2803AFWG by Toshiba

ULN2803AFWG

Toshiba

Toshiba's ULN2803AFWG is an NPN BJT with 8 Darlington banks, built-in diode and resistor. Ideal for switching applications, it has a max IC of 0.5A and VCE of 50V. With a hFE of 1000, this surface-mount transistor comes in a small outline package shape.
BC817-40 by Kec

BC817-40

Kec

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .8 A;
BC846B by Promax-johnton

BC846B

Promax-johnton

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .1 A; No. of Elements: 1; Terminal Form: GULL WING;
BC547-B by Infineon Technologies

BC547-B

Infineon Technologies

BC547-B by Infineon Technologies is a NPN BJT transistor with a min hFE of 200, ideal for switching applications. It has a max IC of 0.1A and can operate at temperatures up to 150°C. The transistor comes in a cylindrical package with through-hole terminals, making it suitable for various electronic circuits.
2N3906 by Toshiba

2N3906

Toshiba

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
2N3906 by Allegro MicroSystems

2N3906

Allegro MicroSystems

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
2N2907A by Good-ark Electronics

2N2907A

Good-ark Electronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
BC547C by Forward International Electronics

BC547C

Forward International Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 420;
MMBT2222A by Weitronic Enterprise

MMBT2222A

Weitronic Enterprise

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;
BC846BS,115 by NXP Semiconductors

BC846BS,115

NXP Semiconductors

NXP Semiconductors' BC846BS,115 is a NPN BJT transistor with 2 elements for switching applications. It has a max collector-emitter voltage of 65V, max current of 0.1A, and min DC current gain of 200. With a package style of small outline and peak reflow temp of 260C, it's ideal for high-frequency circuits in automotive electronics.
BC817-25 by Central Semiconductor

BC817-25

Central Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY;
MMBT2222A by NXP Semiconductors

MMBT2222A

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .6 A;
BC847CE6327HTSA1 by Infineon Technologies

BC847CE6327HTSA1

Infineon Technologies

BC847CE6327HTSA1 by Infineon Technologies is a NPN BJT transistor with hFE of 420. It has Vce of 45V and Ic of 0.1A, suitable for switching applications. This surface mount device comes in a small outline package with Gull Wing terminals, ideal for high-frequency operations up to 250MHz.
2N2905A by Asi Semiconductor

2N2905A

Asi Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;
MMBT3906 by Diodes Incorporated

MMBT3906

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .2 A;
BC846B by National Semiconductor

BC846B

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;