NXP Semiconductors - MRF1K50H-TF1

  1. Home
  2. NXP Semiconductors - MRF1K50H-TF1
MRF1K50H-TF1 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number MRF1K50H-TF1
Description RF Power Field-Effect Transistors;
Datasheet MRF1K50H-TF1 Datasheet
In Stock4,319
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
4,319 $3,750.000 $16,196,250.000

Popular Products

Category Top Products

A2T21H410-24SR6 by NXP Semiconductors

A2T21H410-24SR6

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
A5G23H065NT4 by NXP Semiconductors

A5G23H065NT4

NXP Semiconductors

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Package Shape: RECTANGULAR; Transistor Element Material: GALLIUM NITRIDE; Maximum Operating Temperature: 150 Cel;
PTFA092201EV4R250XTMA1 by Infineon Technologies

PTFA092201EV4R250XTMA1

Infineon Technologies

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
FLU35XM by Fujitsu Semiconductor America

FLU35XM

Fujitsu Semiconductor America

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 15 V; Terminal Position: QUAD;
MRF1517NT1 by NXP Semiconductors

MRF1517NT1

NXP Semiconductors

NXP Semiconductors' MRF1517NT1 is a single N-channel RF Power FET with 25V DS breakdown voltage and 4A max drain current. Ideal for amplifier applications in the UHF band, it operates in enhancement mode with a max power dissipation of 62.5W.
PD54003TR-E by STMicroelectronics

PD54003TR-E

STMicroelectronics

PD54003TR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 4 A, a breakdown voltage of 25 V, and operates in the ultra-high frequency band. This compact surface-mount transistor ensures efficient performance up to 165 °C.
MRF1513T1 by M/a-com Technology Solutions

MRF1513T1

M/a-com Technology Solutions

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Transistor Element Material: SILICON; Package Style (Meter): CHIP CARRIER;
MRFE6VP6300HR3 by Freescale Semiconductor

MRFE6VP6300HR3

Freescale Semiconductor

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Terminal Form: FLAT; Peak Reflow Temperature (C): 260; Case Connection: SOURCE;
AFM906NT1 by NXP Semiconductors

AFM906NT1

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Moisture Sensitivity Level (MSL): 3; Peak Reflow Temperature (C): 260;
CLF1G0035-50 by NXP Semiconductors

CLF1G0035-50

NXP Semiconductors

The NXP Semiconductors CLF1G0035-50 is an RF Power FET with a min DS Breakdown Voltage of 150V, operating in the S Band. It features Gallium Nitride technology, DEPLETION MODE, and is suitable for AMPLIFIER applications. The package style is FLANGE MOUNT with CERAMIC/METAL-SEALED COFIRED body material.
MW6S010GNR1 by Freescale Semiconductor

MW6S010GNR1

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 61.4 W; Package Style (Meter): SMALL OUTLINE; JESD-30 Code: R-PDSO-G2;
MRF137 by Motorola

MRF137

Motorola

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Transistor Element Material: SILICON; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Terminal Finish: Tin/Lead (Sn/Pb);
CGH40006P by Wolfspeed

CGH40006P

Wolfspeed

CGH40006P by Wolfspeed is an N-CHANNEL RF Power FET with a CERAMIC, METAL-SEALED COFIRED package. It operates in ENHANCEMENT MODE for AMPLIFIER applications in the C BAND frequency range. Featuring GALLIUM NITRIDE technology, it has a 120V DS Breakdown Voltage and can handle up to 0.75A Drain Current.
934056582112 by NXP Semiconductors

934056582112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Transistor Application: AMPLIFIER; JESD-30 Code: R-CDFM-F2;
A2G35S160-01SR3 by NXP Semiconductors

A2G35S160-01SR3

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
AFT09S200W02NR3 by NXP Semiconductors

AFT09S200W02NR3

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; JESD-609 Code: e3;
CGHV96130F by Wolfspeed

CGHV96130F

Wolfspeed

RF Power Field-Effect Transistors;
CG2H40010P by Wolfspeed

CG2H40010P

Wolfspeed

CG2H40010P by Wolfspeed is an N-CHANNEL RF Power FET with a 84V DS Breakdown Voltage and 15dB Power Gain, ideal for C Band applications. Operating in DEPLETION MODE, it features Gallium Nitride technology, can handle up to 1.5A Drain Current, and operates b/w -40°C to 150°C temperature range.
934061173135 by NXP Semiconductors

934061173135

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Highest Frequency Band: S BAND; Transistor Application: AMPLIFIER;
934064591118 by NXP Semiconductors

934064591118

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Package Style (Meter): FLANGE MOUNT; Minimum DS Breakdown Voltage: 65 V;