NXP Semiconductors - MRF6P27160HR6

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MRF6P27160HR6 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number MRF6P27160HR6
Description N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 603 W; Case Connection: SOURCE; Maximum Time At Peak Reflow Temperature (s): 40;
Datasheet MRF6P27160HR6 Datasheet
In Stock2,405
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Maximum Time At Peak Reflow Temperature (s): 40
Configuration: COMMON SOURCE, 2 ELEMENTS
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Sub-Category: FET General Purpose Power
Surface Mount: YES
No. of Terminals: 4
Maximum Power Dissipation (Abs): 603 W
Terminal Position: DUAL
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-CDFM-F4
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: S BAND
Maximum Operating Temperature: 225 Cel
Case Connection: SOURCE
Moisture Sensitivity Level (MSL): NOT APPLICABLE
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 68 V
Qualification: Not Qualified
Peak Reflow Temperature (C): 260
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