NXP Semiconductors - MRF6S19140HR3

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MRF6S19140HR3 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number MRF6S19140HR3
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 530 W; Case Connection: SOURCE; Package Style (Meter): FLANGE MOUNT;
Datasheet MRF6S19140HR3 Datasheet
In Stock4,096
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Maximum Time At Peak Reflow Temperature (s): 40
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 2
Minimum DS Breakdown Voltage: 68 V
Qualification: Not Qualified
Maximum Power Dissipation (Abs): 530 W
Terminal Position: DUAL
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-CDFM-F2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: L BAND
Maximum Operating Temperature: 200 Cel
Case Connection: SOURCE
Peak Reflow Temperature (C): 260
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Pricing (USD)

Qty. Unit Price Ext. Price
4,096 $108.290 $443,555.840

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