NXP Semiconductors - MRF6S23100HSR3

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MRF6S23100HSR3 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number MRF6S23100HSR3
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 330 W; JESD-30 Code: R-CDFP-F2; Terminal Position: DUAL;
Datasheet MRF6S23100HSR3 Datasheet
In Stock3,502
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Maximum Time At Peak Reflow Temperature (s): 40
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 2
Minimum DS Breakdown Voltage: 68 V
Qualification: Not Qualified
Maximum Power Dissipation (Abs): 330 W
Terminal Position: DUAL
Package Style (Meter): FLATPACK
JESD-30 Code: R-CDFP-F2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: S BAND
Maximum Operating Temperature: 225 Cel
Case Connection: SOURCE
Peak Reflow Temperature (C): 260
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Pricing (USD)

Qty. Unit Price Ext. Price
3,502 $71.960 $252,003.920

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