MRF6S9130HSR3 by NXP Semiconductors | Transistors

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	MRF6S9130HSR3
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 389 W; Minimum DS Breakdown Voltage: 68 V; Maximum Operating Temperature: 150 Cel;
Datasheet	MRF6S9130HSR3 Datasheet
In Stock	1,045

NAME	DESCRIPTION
Package Body Material:	CERAMIC, METAL-SEALED COFIRED
Maximum Time At Peak Reflow Temperature (s):	NOT APPLICABLE
Configuration:	SINGLE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	AMPLIFIER
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
No. of Terminals:	2
Maximum Power Dissipation (Abs):	389 W
Terminal Position:	DUAL
Package Style (Meter):	FLATPACK
JESD-30 Code:	R-CDFP-F2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Highest Frequency Band:	ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature:	150 Cel
Case Connection:	SOURCE
Moisture Sensitivity Level (MSL):	NOT APPLICABLE
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	68 V
Qualification:	Not Qualified
Peak Reflow Temperature (C):	NOT APPLICABLE

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,045	$70.020	$73,170.900

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