NXP Semiconductors - MRF6V12500GSR5

  1. Home
  2. NXP Semiconductors - MRF6V12500GSR5
MRF6V12500GSR5 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number MRF6V12500GSR5
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Case Connection: SOURCE; No. of Elements: 1; No. of Terminals: 2;
Datasheet MRF6V12500GSR5 Datasheet
In Stock3,027
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 40
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 2
Minimum DS Breakdown Voltage: 110 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: L BAND
Case Connection: SOURCE
Peak Reflow Temperature (C): 260
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
3,027 - -

Popular Products

Category Top Products

BLF888BS,112 by Ampleon Netherlands B V

BLF888BS,112

Ampleon Netherlands B V

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Peak Reflow Temperature (C): NOT SPECIFIED; Package Style (Meter): FLATPACK; Terminal Position: DUAL;
SD2921-10 by STMicroelectronics

SD2921-10

STMicroelectronics

SD2921-10 by STMicroelectronics is an N-channel RF Power FET with 125V DS breakdown voltage and 20A max drain current. Ideal for UHF band applications, it operates in enhancement mode with a max power dissipation of 389W.
PD55035 by STMicroelectronics

PD55035

STMicroelectronics

PD55035 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 8.5 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. This compact surface mount device ensures efficient performance in demanding environments.
BLF178XR,112 by Ampleon Netherlands B V

BLF178XR,112

Ampleon Netherlands B V

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Terminal Form: FLAT; Minimum DS Breakdown Voltage: 110 V; Highest Frequency Band: VERY HIGH FREQUENCY BAND;
DE375-501N21A by IXYS Corporation

DE375-501N21A

IXYS Corporation

DE375-501N21A by IXYS Corp is a plastic/epoxy N-channel RF Power FET with 500V DS breakdown voltage. It operates in the very high-frequency band and has a max drain current of 25A. Ideal for switching applications.
MRF151 by M/a-com Technology Solutions

MRF151

M/a-com Technology Solutions

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; No. of Terminals: 4; Maximum Drain Current (Abs) (ID): 16 A;
MW6S010NR1 by Freescale Semiconductor

MW6S010NR1

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 61.4 W; Maximum Operating Temperature: 225 Cel; JESD-609 Code: e3;
PD57060TR-E by STMicroelectronics

PD57060TR-E

STMicroelectronics

PD57060TR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This compact surface-mount transistor ensures efficient performance in demanding environments.
RF5L051K4CB4 by STMicroelectronics

RF5L051K4CB4

STMicroelectronics

RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; Terminal Finish: Nickel/Gold/Cobalt (Ni/Au/Co);
BLF178XRS,112 by Ampleon Netherlands B V

BLF178XRS,112

Ampleon Netherlands B V

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Package Style (Meter): FLATPACK; Terminal Position: DUAL;
A5G07H800W19NR3 by NXP Semiconductors

A5G07H800W19NR3

NXP Semiconductors

RF Power Field-Effect Transistors;
PD57045STR-E by STMicroelectronics

PD57045STR-E

STMicroelectronics

PD57045STR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 5 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This compact surface-mount transistor ensures efficient performance with a max power dissipation of 73 W.
934055916135 by NXP Semiconductors

934055916135

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Qualification: Not Qualified; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
MRFE6VP5300NR1 by Freescale Semiconductor

MRFE6VP5300NR1

Freescale Semiconductor

RF Power Field-Effect Transistors; Terminal Finish: MATTE TIN; Moisture Sensitivity Level (MSL): 3; JESD-609 Code: e3;
PD57006TR-E by STMicroelectronics

PD57006TR-E

STMicroelectronics

PD57006TR-E by STMicroelectronics is an N-channel RF FET designed for amplifier applications. It features a max drain current of 1 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This surface-mount transistor excels in compact designs with high power dissipation up to 20 W.
SD2922 by STMicroelectronics

SD2922

STMicroelectronics

SD2922 by STMicroelectronics is an N-channel RF power FET designed for ultra-high frequency applications. It features a min DS breakdown voltage of 125V and a max drain current of 40A, making it ideal for high-performance RF amplifiers. Its compact flange mount design ensures efficient surface mounting in various electronic devices.
A2T23H160-24SR3 by NXP Semiconductors

A2T23H160-24SR3

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
A3T23H450W23SR6 by NXP Semiconductors

A3T23H450W23SR6

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
FLU35XM by Sumitomo Electric Industries

FLU35XM

Sumitomo Electric Industries

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Additional Features: HIGH RELIABILITY; Highest Frequency Band: L BAND; Minimum DS Breakdown Voltage: 15 V;
FLU35XM by Fujitsu

FLU35XM

Fujitsu

FLU35XM by Fujitsu is a N-CHANNEL RF FET with 15V DS Breakdown Voltage, operating in DEPLETION MODE. Ideal for L BAND applications, it features 15W Power Dissipation, GALLIUM ARSENIDE technology, and can withstand up to 175°C.