NXP Semiconductors - MRF8P20100HSR3,128

  1. Home
  2. NXP Semiconductors - MRF8P20100HSR3,128
MRF8P20100HSR3,128 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number MRF8P20100HSR3,128
Description RF Power Field-Effect Transistors;
Datasheet MRF8P20100HSR3,128 Datasheet
In Stock1,710
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,710 - -

Popular Products

Category Top Products

AFT26H250-24SR6 by NXP Semiconductors

AFT26H250-24SR6

NXP Semiconductors

NXP Semiconductors' AFT26H250-24SR6 is an N-CHANNEL RF Power FET with METAL-OXIDE SEMICONDUCTOR tech. It operates up to 225°C, withstands peak reflow at 260°C for 40s. Ideal for high-power RF applications in various industries.
A3G18D510-04SR3 by NXP Semiconductors

A3G18D510-04SR3

NXP Semiconductors

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Peak Reflow Temperature (C): 260; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Operating Mode: DEPLETION MODE;
934056520112 by NXP Semiconductors

934056520112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Peak Reflow Temperature (C): NOT SPECIFIED; No. of Elements: 1; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
MRF151 by Motorola

MRF151

Motorola

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Operating Temperature: 200 Cel; JESD-30 Code: O-CRFM-F4;
A2G26H281-04SR3 by NXP Semiconductors

A2G26H281-04SR3

NXP Semiconductors

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Minimum Operating Temperature: -55 Cel; JESD-30 Code: R-CDFP-F4; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
AFT09MS007NT1 by Freescale Semiconductor

AFT09MS007NT1

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 182 W; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 150 Cel;
NE5550234-T1-AZ by Renesas Electronics

NE5550234-T1-AZ

Renesas Electronics

NE5550234-T1-AZ by Renesas Electronics is a N-CHANNEL RF FET with 0.6A max drain current and 12.5W max power dissipation. It utilizes METAL-OXIDE SEMICONDUCTOR tech, operates up to 150°C, ideal for RF power applications requiring high efficiency and reliability in surface mount configurations.
934061276112 by NXP Semiconductors

934061276112

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Minimum DS Breakdown Voltage: 65 V; Transistor Element Material: SILICON; JESD-30 Code: R-CDFM-F4;
LET9045S by STMicroelectronics

LET9045S

STMicroelectronics

LET9045S by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 9 A, breakdown voltage of 80 V, and operates in the ultra-high frequency band. Ideal for compact, high-performance circuits.
PD55025 by STMicroelectronics

PD55025

STMicroelectronics

STMicroelectronics PD55025 is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage and 7A Drain Current. Ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND, it features a PLASTIC/EPOXY package, GULL WING terminals, and operates in ENHANCEMENT MODE up to 165°C.
PD57045TR-E by STMicroelectronics

PD57045TR-E

STMicroelectronics

PD57045TR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 5 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This compact surface-mount transistor ensures efficient performance with a max power dissipation of 73 W.
MRF1513T1 by Freescale Semiconductor

MRF1513T1

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 31.2 W; Transistor Application: AMPLIFIER; Package Body Material: PLASTIC/EPOXY;
A2T21H360-23NR6 by NXP Semiconductors

A2T21H360-23NR6

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Terminal Finish: TIN; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 40;
934061844118 by NXP Semiconductors

934061844118

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (ID): 3.5 A; Terminal Position: DUAL; Transistor Application: AMPLIFIER;
PD55008L-E by STMicroelectronics

PD55008L-E

STMicroelectronics

STMicroelectronics' PD55008L-E is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage, ideal for AMPLIFIER applications. Operating in ENHANCEMENT MODE at ULTRA HIGH FREQUENCY, it offers 5A Drain Current and 19.5W Power Dissipation in a SQUARE PLASTIC package with NO LEAD terminals.
PD20015-E by STMicroelectronics

PD20015-E

STMicroelectronics

PD20015-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. This surface-mount transistor ensures efficient performance with a max temp of 165 °C.
PD55003-01 by STMicroelectronics

PD55003-01

STMicroelectronics

PD55003-01 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a 40V min breakdown voltage, operates at ultra-high frequencies, and supports a max drain current of 2.5A. Ideal for compact surface mount designs, it excels in high-temperature environments up to 150 °C.
LET9045C by STMicroelectronics

LET9045C

STMicroelectronics

LET9045C by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 9 A, breakdown voltage of 80 V, and operates in the ultra-high frequency band. Its robust design supports high power dissipation up to 108 W.
A3T21H450W23SR6 by NXP Semiconductors

A3T21H450W23SR6

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum Power Gain (Gp): 14.2 dB; Minimum Operating Temperature: -40 Cel;
A3G20S350-01SR3 by NXP Semiconductors

A3G20S350-01SR3

NXP Semiconductors

NXP Semiconductors A3G20S350-01SR3 is an N-CHANNEL RF FET with 125V DS Breakdown Voltage, 17dB Power Gain, and GaN Element. Ideal for S Band applications, this DEPLETION MODE transistor operates from -55°C to 225°C in AMPLIFIER circuits.