NXP Semiconductors - MRF8S9202GNR3,528

  1. Home
  2. NXP Semiconductors - MRF8S9202GNR3,528
MRF8S9202GNR3,528 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number MRF8S9202GNR3,528
Description RF Power Field-Effect Transistors;
Datasheet MRF8S9202GNR3,528 Datasheet
In Stock1,704
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,704 $124.610 $212,335.440

Popular Products

Category Top Products

RD15HVF1 by Mitsubishi Electric

RD15HVF1

Mitsubishi Electric

RD15HVF1 by Mitsubishi Electric is an N-CHANNEL RF Power FET with a 30V DS Breakdown Voltage, suitable for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. It has a max Drain Current of 4A, power dissipation of 48W, and operates in ENHANCEMENT MODE at up to 150°C temperature.
PD54003STR-E by STMicroelectronics

PD54003STR-E

STMicroelectronics

PD54003STR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 4 A, a breakdown voltage of 25 V, and operates in the ultra-high frequency band. This compact surface mount transistor ensures efficient performance up to 165 °C.
A2T23H200W23SR6 by NXP Semiconductors

A2T23H200W23SR6

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
CGH40006S-AMP1 by Wolfspeed

CGH40006S-AMP1

Wolfspeed

RF Power Field-Effect Transistors;
MRF300BN by NXP Semiconductors

MRF300BN

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
NE5550979A-A by Renesas Electronics

NE5550979A-A

Renesas Electronics

NE5550979A-A by Renesas Electronics is a N-CHANNEL RF Power FET with 3A max drain current and 25W max power dissipation. It operates at up to 150°C, suitable for high-power RF applications in surface-mount configurations.
PD57070-E by STMicroelectronics

PD57070-E

STMicroelectronics

STMicroelectronics' PD57070-E is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage and 7A Drain Current. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features a PLASTIC/EPOXY package, SINGLE configuration, and operates in ENHANCEMENT MODE at up to 165°C.
BLF6G21-10G,135 by Ampleon Netherlands B V

BLF6G21-10G,135

Ampleon Netherlands B V

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Operating Mode: ENHANCEMENT MODE; Terminal Form: GULL WING;
PD54008L-E by STMicroelectronics

PD54008L-E

STMicroelectronics

STMicroelectronics PD54008L-E is an N-CHANNEL RF Power FET with 25V DS Breakdown Voltage and 5A Drain Current. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features a 26.7W power dissipation and operates in ENHANCEMENT MODE at up to 150°C.
MRF374 by Motorola

MRF374

Motorola

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Package Shape: RECTANGULAR; Transistor Element Material: SILICON; No. of Elements: 2;
LET9085 by STMicroelectronics

LET9085

STMicroelectronics

LET9085 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 12 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This versatile component supports high power dissipation up to 186 W.
934056468112 by NXP Semiconductors

934056468112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Peak Reflow Temperature (C): 245; Highest Frequency Band: L BAND; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
SD2931-12W by STMicroelectronics

SD2931-12W

STMicroelectronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Peak Reflow Temperature (C): NOT SPECIFIED; Package Style (Meter): FLANGE MOUNT; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
BLF246 by New Jersey Semiconductor Products

BLF246

New Jersey Semiconductor Products

N-CHANNEL; Configuration: SINGLE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum DS Breakdown Voltage: 65 V; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;
934064592118 by NXP Semiconductors

934064592118

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (ID): 28 A; Terminal Form: FLAT; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
A2T18S162W31GSR3 by NXP Semiconductors

A2T18S162W31GSR3

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
SD2943W by STMicroelectronics

SD2943W

STMicroelectronics

SD2943W by STMicroelectronics is an N-CHANNEL RF Power FET with 40A max drain current and 648W max power dissipation. Ideal for high-power applications, it operates at up to 200°C and features metal-oxide semiconductor technology.
PD85006L-E by STMicroelectronics

PD85006L-E

STMicroelectronics

PD85006L-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 2 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. This surface-mount device ensures efficient performance in compact designs.
A2T18S262W12NR3 by NXP Semiconductors

A2T18S262W12NR3

NXP Semiconductors

RF Power Field-Effect Transistors; Terminal Finish: TIN; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 40; Moisture Sensitivity Level (MSL): 3; Peak Reflow Temperature (C): 260;
A3T23H450W23SR6 by NXP Semiconductors

A3T23H450W23SR6

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;