NXP Semiconductors - MRFE6V12500GSR5

  1. Home
  2. NXP Semiconductors - MRFE6V12500GSR5
MRFE6V12500GSR5 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number MRFE6V12500GSR5
Description RF Power Field-Effect Transistors;
Datasheet MRFE6V12500GSR5 Datasheet
In Stock3,433
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
3,433 - -

Popular Products

Category Top Products

BLF6G15L-40RN by NXP Semiconductors

BLF6G15L-40RN

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED; Moisture Sensitivity Level (MSL): NOT APPLICABLE;
PTVA101K02EVP1 by Infineon Technologies

PTVA101K02EVP1

Infineon Technologies

Infineon's PTVA101K02EVP1 is an N-CHANNEL RF Power FET with 105V DS Breakdown Voltage, suitable for L BAND applications. It features COMMON SOURCE configuration, METAL-OXIDE SEMICONDUCTOR tech, and operates in ENHANCEMENT MODE. This FLANGE MOUNT transistor has a max temp of 200°C and is ideal for AMPLIFIER use.
MRF136Y by Tyco Electronics M/a-com

MRF136Y

Tyco Electronics M/a-com

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Qualification: Not Qualified; Package Shape: RECTANGULAR; No. of Elements: 2;
A2T20H160W04NR3 by NXP Semiconductors

A2T20H160W04NR3

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Terminal Finish: TIN; Maximum Time At Peak Reflow Temperature (s): 40; Package Body Material: PLASTIC/EPOXY;
TGI1314-50L by Toshiba

TGI1314-50L

Toshiba

Toshiba's TGI1314-50L is an N-channel RF Power FET with 50V DS breakdown voltage, ideal for KU band applications. Featuring a ceramic-metal sealed co-fired package, it operates in depletion mode with 15A drain current and 140W power dissipation at max 175°C temperature.
BLF7G22LS-160,112 by Ampleon Netherlands B V

BLF7G22LS-160,112

Ampleon Netherlands B V

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Drain Current (ID): 36 A; Peak Reflow Temperature (C): NOT SPECIFIED;
MRF151G by Motorola

MRF151G

Motorola

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Highest Frequency Band: VERY HIGH FREQUENCY BAND; JESD-30 Code: R-CDFM-F4;
A3G18H500-04SR3 by NXP Semiconductors

A3G18H500-04SR3

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
BLF175 by Asi Semiconductor

BLF175

Asi Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 68 W; Maximum Drain Current (Abs) (ID): 4 A; Maximum Drain Current (ID): 4 A;
PD54008S-E by STMicroelectronics

PD54008S-E

STMicroelectronics

PD54008S-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 5 A, a breakdown voltage of 25 V, and operates in the ultra-high frequency band. This compact surface-mount device ensures efficient performance up to 165 °C.
A3T21H450W23SR6 by NXP Semiconductors

A3T21H450W23SR6

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum Power Gain (Gp): 14.2 dB; Minimum Operating Temperature: -40 Cel;
A5G26S004NT6 by NXP Semiconductors

A5G26S004NT6

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 40;
PD55025STR-E by STMicroelectronics

PD55025STR-E

STMicroelectronics

STMicroelectronics' PD55025STR-E is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage, ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. It features a SINGLE configuration, 7A ID, and operates in ENHANCEMENT MODE at up to 165°C.
NE5550779A-T1-A by Renesas Electronics

NE5550779A-T1-A

Renesas Electronics

NE5550779A-T1-A by Renesas Electronics is an N-CHANNEL RF FET with 2.1A max drain current and 17.8W power dissipation. Utilized in applications requiring high-power amplification, it operates up to 150°C, making it suitable for various RF power applications.
SD2904 by STMicroelectronics

SD2904

STMicroelectronics

SD2904 by STMicroelectronics is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage. It operates in the ULTRA HIGH FREQUENCY BAND, with a max Drain Current of 5A. This SINGLE configuration transistor is commonly used as an AMPLIFIER in various applications due to its SILICON element material and ENHANCEMENT MODE operation.
PTVA101K02EV-V1-R0 by Wolfspeed

PTVA101K02EV-V1-R0

Wolfspeed

PTVA101K02EV-V1-R0 by Wolfspeed is an N-CHANNEL RF Power FET with 105V DS Breakdown Voltage, 17dB Power Gain, and L BAND frequency. It is a COMMON SOURCE amplifier suitable for ENHANCEMENT MODE operation in applications requiring high power amplification in the L Band.
LET19060C by STMicroelectronics

LET19060C

STMicroelectronics

LET19060C by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This surface-mount transistor excels in high-power scenarios with a dissipation of up to 130 W.
PD60030 by STMicroelectronics

PD60030

STMicroelectronics

PD60030 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a 65V min DS breakdown voltage, operates in enhancement mode, and supports L band frequencies. Its compact surface mount design ensures efficient performance in various electronic devices.
A2T09VD250NR1 by NXP Semiconductors

A2T09VD250NR1

NXP Semiconductors

RF Power Field-Effect Transistors; JESD-609 Code: e3; Peak Reflow Temperature (C): 260; Terminal Finish: TIN; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 40;
QPD1008L by Qorvo

QPD1008L

Qorvo

Qorvo's QPD1008L is a single N-channel RF FET with GaN technology, operating in S band. It features a ceramic-metal sealed co-fired package for high electron mobility, suitable for amplifier applications. With a max temperature of 85°C and dual terminal position, it offers reliable performance in various environments.