NXP Semiconductors - MRFE6VS25GN-960

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MRFE6VS25GN-960 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number MRFE6VS25GN-960
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 133 V; No. of Terminals: 2; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet MRFE6VS25GN-960 Datasheet
In Stock4,607
NAME DESCRIPTION
Minimum Power Gain (Gp): 24.5 dB
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Minimum Operating Temperature: -40 Cel
No. of Terminals: 2
Minimum DS Breakdown Voltage: 133 V
Terminal Position: DUAL
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PDFM-F2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature: 150 Cel
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Power Dissipation Ambient: 25 W
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Pricing (USD)

Qty. Unit Price Ext. Price
4,607 $900.000 $4,146,300.000

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