MRFG35003MT1 by NXP Semiconductors | Transistors

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	MRFG35003MT1
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Qualification: Not Qualified; Maximum Power Dissipation Ambient: 8.1 W; Minimum Power Gain (Gp): 10 dB;
Datasheet	MRFG35003MT1 Datasheet
In Stock	997

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	40
Configuration:	SINGLE
Transistor Element Material:	GALLIUM ARSENIDE
Field Effect Transistor Technology:	HIGH ELECTRON MOBILITY
Transistor Application:	AMPLIFIER
Sub-Category:	FET RF Small Signal
Surface Mount:	YES
Terminal Finish:	Tin/Lead (Sn/Pb)
No. of Terminals:	4
Terminal Position:	QUAD
Package Style (Meter):	FLATPACK
JESD-30 Code:	R-PQFP-F4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	DEPLETION MODE
Highest Frequency Band:	S BAND
Maximum Operating Temperature:	150 Cel
Case Connection:	SOURCE
Maximum Power Dissipation Ambient:	8.1 W
Moisture Sensitivity Level (MSL):	1
Minimum Power Gain (Gp):	10 dB
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e0
Minimum DS Breakdown Voltage:	15 V
Qualification:	Not Qualified
Peak Reflow Temperature (C):	260

Pricing (USD)

Qty.	Unit Price	Ext. Price
997	-	-

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