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Manufacturer | NXP Semiconductors |
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Manufacturer's Part Number | MRFG35003NT1 |
Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: GALLIUM ARSENIDE; No. of Terminals: 4; Terminal Form: FLAT; |
Datasheet | MRFG35003NT1 Datasheet |
In Stock | 1,769 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Maximum Time At Peak Reflow Temperature (s): | 40 |
Configuration: | SINGLE |
Transistor Element Material: | GALLIUM ARSENIDE |
Field Effect Transistor Technology: | HIGH ELECTRON MOBILITY |
Transistor Application: | AMPLIFIER |
Sub-Category: | FET RF Small Signal |
Surface Mount: | YES |
Terminal Finish: | Matte Tin (Sn) |
No. of Terminals: | 4 |
Terminal Position: | QUAD |
Package Style (Meter): | FLATPACK |
JESD-30 Code: | R-PQFP-F4 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | FLAT |
Operating Mode: | DEPLETION MODE |
Highest Frequency Band: | S BAND |
Maximum Operating Temperature: | 85 Cel |
Case Connection: | SOURCE |
Maximum Power Dissipation Ambient: | 8.1 W |
Moisture Sensitivity Level (MSL): | 1 |
Minimum Power Gain (Gp): | 10 dB |
Polarity or Channel Type: | N-CHANNEL |
JESD-609 Code: | e3 |
Minimum DS Breakdown Voltage: | 15 V |
Qualification: | Not Qualified |
Peak Reflow Temperature (C): | 260 |