NXP Semiconductors - MRFX1K80H-81MHZ

  1. Home
  2. NXP Semiconductors - MRFX1K80H-81MHZ
MRFX1K80H-81MHZ by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number MRFX1K80H-81MHZ
Description RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
Datasheet MRFX1K80H-81MHZ Datasheet
In Stock4,427
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Peak Reflow Temperature (C): NOT SPECIFIED
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
4,427 $1,350.000 $5,976,450.000

Popular Products

Category Top Products

934065978118 by NXP Semiconductors

934065978118

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Case Connection: SOURCE; Transistor Element Material: SILICON; Package Shape: RECTANGULAR;
934061137112 by NXP Semiconductors

934061137112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Highest Frequency Band: S BAND; Maximum Drain Current (ID): 8.2 A;
BLF147 by New Jersey Semiconductor Products

BLF147

New Jersey Semiconductor Products

N-CHANNEL; Configuration: SINGLE; Operating Mode: ENHANCEMENT MODE; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 65 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
MRF181ZR1 by Onsemi

MRF181ZR1

Onsemi

MRF181ZR1 by Onsemi is an N-CHANNEL RF Power FET with a 65V DS Breakdown Voltage. It operates in the Ultra High Frequency Band and has a max Drain Current of 2A, making it ideal for amplifier applications. The transistor features a CERAMIC, METAL-SEALED COFIRED package with GULL WING terminals for surface mount installation.
LET9045STR by STMicroelectronics

LET9045STR

STMicroelectronics

LET9045STR by STMicroelectronics is an N-CHANNEL RF Power FET with 80V DS Breakdown Voltage, suitable for AMPLIFIER applications. It operates in ENHANCEMENT MODE at ULTRA HIGH FREQUENCY BAND, with 5A Drain Current and 160W Power Dissipation. Ideal for small outline packages requiring high power handling capabilities.
MW6S004NT1 by NXP Semiconductors

MW6S004NT1

NXP Semiconductors

The NXP Semiconductors MW6S004NT1 is a single N-channel RF Power FET with a 68V DS breakdown voltage. It operates in enhancement mode, suitable for amplifier applications in the L band. This transistor features a small outline package, metal-oxide semiconductor technology, and can withstand temperatures up to 150°C.
BLF6G15L-250PBRN by NXP Semiconductors

BLF6G15L-250PBRN

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 3 ELEMENTS; Surface Mount: YES; Maximum Drain Current (ID): 64 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Operating Mode: ENHANCEMENT MODE;
MRF134 by New Jersey Semiconductor Products

MRF134

New Jersey Semiconductor Products

N-CHANNEL; Configuration: SINGLE; Transistor Element Material: SILICON; Maximum Drain Current (ID): .9 A; No. of Elements: 1; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
BLF246B by NXP Semiconductors

BLF246B

NXP Semiconductors

The NXP Semiconductors BLF246B is an RF Power FET with 65V DS breakdown voltage and 14dB min power gain. It operates in the VHF band, has a max drain current of 8A, and a package style of flange mount. Commonly used as an amplifier in very high-frequency applications.
CGH40010P by Wolfspeed

CGH40010P

Wolfspeed

CGH40010P by Wolfspeed is an N-CHANNEL RF Power FET with a 120V DS Breakdown Voltage. It operates in the C BAND, featuring HIGH ELECTRON MOBILITY GaN technology. This amplifier transistor has a max temperature of 105°C and comes in a RECTANGULAR package for surface mount applications.
934056498112 by NXP Semiconductors

934056498112

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Minimum DS Breakdown Voltage: 65 V; Maximum Drain Current (ID): 18 A; Qualification: Not Qualified;
MRFE6VP61K25HR6 by NXP Semiconductors

MRFE6VP61K25HR6

NXP Semiconductors

NXP Semiconductors' MRFE6VP61K25HR6 is an N-CHANNEL RF Power FET with 125V DS Breakdown Voltage, operating in the Ultra High Frequency Band. It features a Common Source configuration, 1300W Max Power Dissipation, and is ideal for AMPLIFIER applications. This CERAMIC/METAL-SEALED COFIRED transistor has a RECTANGULAR package shape and operates in ENHANCEMENT MODE at up to 225°C.
BLF647PS,112 by Ampleon Netherlands B V

BLF647PS,112

Ampleon Netherlands B V

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Highest Frequency Band: L BAND; Reference Standard: IEC-60134; Package Shape: RECTANGULAR;
AFT09MP055GNR1 by NXP Semiconductors

AFT09MP055GNR1

NXP Semiconductors

N-CHANNEL; Maximum Power Dissipation (Abs): 625 W; JESD-609 Code: e3; Peak Reflow Temperature (C): 260; Terminal Finish: TIN; Moisture Sensitivity Level (MSL): 3;
MRFE6S9060NR1 by Freescale Semiconductor

MRFE6S9060NR1

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 225 Cel;
934064591112 by NXP Semiconductors

934064591112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-CDFM-F2; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Maximum Drain Current (ID): 28 A;
PD54008-E by STMicroelectronics

PD54008-E

STMicroelectronics

STMicroelectronics PD54008-E is an N-CHANNEL RF Power FET with 25V DS Breakdown Voltage. It operates in ULTRA HIGH FREQUENCY BAND, suitable for AMPLIFIER applications. With 5A Drain Current and 73W Power Dissipation, it's ideal for high-power amplification needs.
SD57060 by STMicroelectronics

SD57060

STMicroelectronics

SD57060 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. Its compact flange mount design ensures efficient performance in various electronic devices.
MRFE6VP5300NR1 by Freescale Semiconductor

MRFE6VP5300NR1

Freescale Semiconductor

RF Power Field-Effect Transistors; Terminal Finish: MATTE TIN; Moisture Sensitivity Level (MSL): 3; JESD-609 Code: e3;
A2I22D050NR1 by Freescale Semiconductor

A2I22D050NR1

Freescale Semiconductor

RF Power Field-Effect Transistors; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 3; Terminal Finish: TIN;