NXP Semiconductors - MRFX600GSR5

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MRFX600GSR5 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number MRFX600GSR5
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Terminal Position: DUAL; Transistor Element Material: SILICON; Package Shape: RECTANGULAR;
Datasheet MRFX600GSR5 Datasheet
In Stock1,345
NAME DESCRIPTION
Minimum Power Gain (Gp): 24.5 dB
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 40
Configuration: SEPARATE, 2 ELEMENTS
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Maximum Feedback Capacitance (Crss): 1.1 pF
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Minimum Operating Temperature: -40 Cel
No. of Terminals: 4
Minimum DS Breakdown Voltage: 179 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature: 225 Cel
Case Connection: SOURCE
Peak Reflow Temperature (C): 260
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Pricing (USD)

Qty. Unit Price Ext. Price
1,345 $131.190 $176,450.550

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