NXP Semiconductors - MW4IC001NR4

  1. Home
  2. NXP Semiconductors - MW4IC001NR4
MW4IC001NR4 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number MW4IC001NR4
Description WIDE BAND MEDIUM POWER; Maximum Operating Frequency: 2170 MHz; Characteristic Impedance: 50 ohm; Terminal Finish: Matte Tin (Sn); Gain: 12 dB; JESD-609 Code: e3;
Datasheet MW4IC001NR4 Datasheet
In Stock1,412
NAME DESCRIPTION
Construction: COMPONENT
Minimum Operating Frequency: 800 MHz
Characteristic Impedance: 50 ohm
Maximum Operating Frequency: 2170 MHz
RF or Microwave Device Type: WIDE BAND MEDIUM POWER
Terminal Finish: Matte Tin (Sn)
JESD-609 Code: e3
Gain: 12 dB
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,412 $9.430 $13,315.160

Popular Products

Category Top Products

HMC589AST89E by Analog Devices

HMC589AST89E

Analog Devices

Analog Devices' HMC589AST89E is a wide band low power RF amplifier with 13 dB gain and 8 dBm max input power. Operating from -40 to 85°C, it covers frequencies from 0 to 4000 MHz. Ideal for RF & microwave applications requiring high performance in a compact form factor.
TGA2237-SM by Triquint Semiconductor

TGA2237-SM

Triquint Semiconductor

WIDE BAND HIGH POWER; Terminal Finish: GOLD OVER NICKEL; Gain: 19 dB; Construction: COMPONENT; Minimum Operating Frequency: 30 MHz; Maximum Input Power (CW): 33 dBm;
MAAM28000-A1G by M/a-com

MAAM28000-A1G

M/a-com

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: CERAMIC; Technology: GAAS; Minimum Operating Temperature: -55 Cel;
HMC326MS8GETR by Hittite Microwave

HMC326MS8GETR

Hittite Microwave

WIDE BAND MEDIUM POWER; Construction: COMPONENT; Minimum Operating Frequency: 3000 MHz; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 15 dBm; JESD-609 Code: e3;
ZHL-1-2W+ by Mini-circuits

ZHL-1-2W+

Mini-circuits

ZHL-1-2W+ by Mini-circuits is a wide band medium power RF amplifier with a gain of 29 dB. It has a max input power of 10 dBm and can operate in temperatures ranging from -20 to 65 °C. This coaxial amplifier is suitable for applications requiring amplification in the frequency range of 5 MHz to 500 MHz.
HMC903LP3E by Analog Devices

HMC903LP3E

Analog Devices

Analog Devices' HMC903LP3E is a GAAS RF amplifier with 17.5 dB gain, operating from 6-17 GHz. It has a max input power of 10 dBm and draws 110 mA at 3.5 V. Ideal for wideband low-power applications, this component offers high performance in plastic/epoxy packaging for surface mount assembly.
HMC634LC4 by Hittite Microwave

HMC634LC4

Hittite Microwave

WIDE BAND LOW POWER; Construction: COMPONENT; Minimum Operating Temperature: -40 Cel; Maximum Input Power (CW): 10 dBm; Maximum Operating Temperature: 85 Cel; Minimum Operating Frequency: 5000 MHz;
AD8354ACPZ-REEL7 by Analog Devices

AD8354ACPZ-REEL7

Analog Devices

AD8354ACPZ-REEL7 by Analog Devices is a RF amplifier with 17.3 dB gain, operating from 1 MHz to 2700 MHz. It has a max input power of 10 dBm and operates on 3/5 V supplies. Ideal for wideband low-power applications requiring a component construction with matte tin terminals in plastic/epoxy package.
CMD291P4 by Qorvo

CMD291P4

Qorvo

WIDE BAND MEDIUM POWER; Terminal Finish: Matte Tin (Sn); JESD-609 Code: e3;
GALI-51+ by Mini-circuits

GALI-51+

Mini-circuits

GALI-51+ by Mini-circuits is a wide band low power RF amplifier with 14 dB gain and 1.7 VSWR. It operates from 0 to 4000 MHz, suitable for various RF applications. With a compact plastic/epoxy package, it can handle up to 13 dBm input power and supports surface mounting.
HMC462 by Hittite Microwave

HMC462

Hittite Microwave

WIDE BAND LOW POWER; Technology: GAAS; Gain: 12 dB; Package Equivalence Code: DIE OR CHIP; No. of Functions: 1; Power Supplies (V): 5;
MW7IC2725NBR1 by Freescale Semiconductor

MW7IC2725NBR1

Freescale Semiconductor

NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: MOS; Terminal Finish: Matte Tin (Sn); Characteristic Impedance: 50 ohm; Construction: COMPONENT;
BGU8103X by NXP Semiconductors

BGU8103X

NXP Semiconductors

The NXP Semiconductors BGU8103X is a RF & Microwave Amplifier with 10 dBm CW input power, 1.78 max VSWR, and 14.5 dB gain. It operates b/w -40 to 85°C, has a characteristic impedance of 50 ohm, and is suitable for narrow band low power applications in the frequency range of 1559-1610 MHz.
SMA70-2 by M/a-com

SMA70-2

M/a-com

RF/Microwave Amplifiers; No. of Terminals: 4; Package Body Material: METAL; Package Equivalence Code: MODULE,4LEAD,.45; Maximum Operating Temperature: 50 Cel; Minimum Operating Temperature: 0 Cel;
TQL9062 by Qorvo

TQL9062

Qorvo

The Qorvo TQL9062 is a wide band medium power RF amplifier with 15 dB gain, operating from 500 MHz to 6 GHz. It has a max input power of 33 dBm and VSWR of 1.29, suitable for various RF applications. Constructed with E-PHEMT technology, it features a plastic/epoxy package body and operates b/w -40°C to 105°C.
MGA-30889-TR1G by Broadcom

MGA-30889-TR1G

Broadcom

Broadcom's MGA-30889-TR1G is a GAAS RF amplifier with 14.6dB gain, operating from 40MHz to 2600MHz. It has a max input power of 20dBm and requires a 5V power supply, making it ideal for wideband low-power applications in RF and microwave systems.
HMC311LP3ETR by Analog Devices

HMC311LP3ETR

Analog Devices

Analog Devices' HMC311LP3ETR is a GAAS RF amplifier with 12dB gain, 50 ohm impedance, and 10 dBm CW input power. It operates from 0 to 6000 MHz, drawing 74mA at 5V. Ideal for wideband low-power applications in temperatures ranging from -40°C to +85°C.
TGA2237-SM by Qorvo

TGA2237-SM

Qorvo

Qorvo's TGA2237-SM is a wideband high-power RF amplifier with 19 dB gain, operating from 30 MHz to 2500 MHz. It can handle up to 33 dBm CW input power with a VSWR of 10. Ideal for applications requiring robust RF amplification in the RF & Microwave domain.
CMD245C4 by Qorvo

CMD245C4

Qorvo

Qorvo's CMD245C4 is a wide band low power RF amplifier with 14 dB gain, operating from 6-18 GHz. It can handle up to 17 dBm CW input power and has a temperature range of -55 to +85°C. Ideal for RF & microwave applications requiring high performance in compact designs.
HMC429LP4E by Hittite Microwave

HMC429LP4E

Hittite Microwave

NARROW BAND LOW POWER; Maximum Voltage Standing Wave Ratio: 2; Additional Features: LOW NOISE; Characteristic Impedance: 50 ohm; Terminal Finish: Matte Tin (Sn); Construction: COMPONENT;